Abstract:This paper reports recent progress in the development of a vertical MET, the purely vertical JFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the need of epitaxial regrowth at middle of device fabrication and the need of a merged lateral MET to control the vertical MET. Different structures have been designed to target breakdown voltages ranging from 600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility of achieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size of the designs has been reduced compared to early report. Gate trench width has been reduced from 3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have been tested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC and switching characteristics at room and elevated temperatures. Very fast current rise/fall times of < 1ns were observed from RT to 200 degrees C. PSpice model for TI-VJFET has been developed and applied to the performance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200 degrees C junction temperature without using soft-switching scheme. Preliminary experimental demonstration of a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported.

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Normally-off trench JFET technology in 4H silicon carbide

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Bidirectional Current 4h‐sic VJFET

Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A High Performance 4H-Sic Normally-off VJFET

Transient analysis of Si-MOS and SiC-JFET cascode power switches

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Evaluation of Termination Techniques for 4H-Sic Pin Diodes and Trench JFETs

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Design Consideration and Fabrication of 1.2-Kv 4H-Sic Trenched-And-Implanted Vertical Junction Field-Effect Transistors

SiC devices parameters effects on the electrical behaviour of mCascode switch

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

Development of 4H-SiC LJFET-Based Power IC

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain