Abstract:A silicon carbide junction field effect transistors (SiC-JFETs) /gallium-nitride high electron mobility transistor (GaN-HEMT) hybrid power switch is proposed with scaled-up current rating enabled by parallel-connected high-voltage (HV, i.e., 1200 V) SiC-JFETs controlled by a single low-voltage enhanced-mode GaN-HEMT in a cascode configuration. Only one set of gate driver (for the GaN HEMT) is required by the cascode device and therewith higher efficiency is achieved regarding the gate-driver loss compared with a board-level parallel connection of several standalone devices (e.g., SiC MOSFETs or SiC/Si cascode devices). Key factors that affect the current-sharing balance between the parallel-connected SiC JFETs and associated matching method are systematically investigated by taking into account the specific transient behaviors of the cascode device. It is found that the variation in SiC JFETs’ threshold voltages plays the most important role in current balancing when the GaN HEMT drives the SiC JFETs internally with superior fast speed. A 1200-V/22-mΩ proof-of-concept prototype of the proposed device with two SiC JFETs in parallel is demonstrated and characterized in a comparative study considering the matching of JFETs. By matching the SiC JFETs according to their transfer curves, the current-sharing imbalance among the SiC JFETs can be limited to be less than 1.5%. This all-wide-bandgap device exhibits high-temperature stability of threshold voltage, extremely small gate-driver loss, and low interelectrode capacitances, of which features are promising for high-frequency applications.

Transient analysis of Si-MOS and SiC-JFET cascode power switches

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

SiC devices parameters effects on the electrical behaviour of mCascode switch

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Performance of SiC Cascode Switches with Si MOS Gate

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Mixed-Mode Investigation of Hybrid Sic/Si Cascode Configurations

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Time-Domain and Frequency-Domain Analysis of SiC MOSFET Switching Transients Considering Transmission of Control, Drive, and Power Pulses

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Static and Dynamic Characteristics of a 1200-V/22 -Mω Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

SiC MOSFET Driver and Experiment Analysis

Current Status and Future Prospects of SiC Power JFETs and ICs.

Analytical Modeling of SiC MOSFET During Switching Transient

Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair

Three-dimensional Fully-coupled Electromagnetic Field Modeling and Characterization of SiC MOSFET Switching Transients

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation