Abstract:A silicon carbide junction field effect transistors (SiC-JFETs) /gallium-nitride high electron mobility transistor (GaN-HEMT) hybrid power switch is proposed with scaled-up current rating enabled by parallel-connected high-voltage (HV, i.e., 1200 V) SiC-JFETs controlled by a single low-voltage enhanced-mode GaN-HEMT in a cascode configuration. Only one set of gate driver (for the GaN HEMT) is required by the cascode device and therewith higher efficiency is achieved regarding the gate-driver loss compared with a board-level parallel connection of several standalone devices (e.g., SiC MOSFETs or SiC/Si cascode devices). Key factors that affect the current-sharing balance between the parallel-connected SiC JFETs and associated matching method are systematically investigated by taking into account the specific transient behaviors of the cascode device. It is found that the variation in SiC JFETs’ threshold voltages plays the most important role in current balancing when the GaN HEMT drives the SiC JFETs internally with superior fast speed. A 1200-V/22-mΩ proof-of-concept prototype of the proposed device with two SiC JFETs in parallel is demonstrated and characterized in a comparative study considering the matching of JFETs. By matching the SiC JFETs according to their transfer curves, the current-sharing imbalance among the SiC JFETs can be limited to be less than 1.5%. This all-wide-bandgap device exhibits high-temperature stability of threshold voltage, extremely small gate-driver loss, and low interelectrode capacitances, of which features are promising for high-frequency applications.

Mixed-Mode Investigation of Hybrid Sic/Si Cascode Configurations

Transient analysis of Si-MOS and SiC-JFET cascode power switches

SiC devices parameters effects on the electrical behaviour of mCascode switch

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Performance of SiC Cascode Switches with Si MOS Gate

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Static and Dynamic Characteristics of a 1200-V/22 -Mω Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Investigation On Degradation Mechanism And Optimization For Sic Power Mosfets Under Long-Term Short-Circuit Stress