Abstract:Solid-state semiconductor switches are emerging as an attractive choice for the fast switching of compact, repetitive, and pulsed power systems. In particular, the high voltage and fast switching capabilities of SiC MOSFETs are well suited for many applications when appropriately gated. For instance, the turn-on and turn-off characteristics of such devices are strongly dependent on the gate driving circuitry. Traditional commercial gate drivers, typically utilizing push–pull or totem-pole driving topologies, are often not well suited for fast, high current switching with rise times on the order of 10–20 ns, as the driving performance is highly dependent on the combined RLC characteristics of the driving circuitry and the switching device. The proposed gate drive topology utilizes a current-carrying inductor to rapidly charge theMOSFET gate–source capacitance. A high-voltage inductive kick generates the necessary potential to drive the inductor current into the gate through the parasitic gate impedance. As the energy stored in the drive inductor is continuously variable, it can be adjusted such that the gate voltage settles to a lower value, typically 20 V, after the initial kick to prevent excessive gate–source overvoltage. With an inductive drive current of ~23 A, a peak $text{d}I/text{d}t$ of 25 kA $mu text{s}^{-1}$ was achieved for the tested bare SiC MOSFET die. Additionally, a peak $text{d}I/text{d}t$ of 13 kA $mu text{s}^{-1}$ was achieved with the TO-247 packaged device.

Time-Domain and Frequency-Domain Analysis of SiC MOSFET Switching Transients Considering Transmission of Control, Drive, and Power Pulses

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Transient analysis of Si-MOS and SiC-JFET cascode power switches

Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs

SiC MOSFET Driver and Experiment Analysis

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Analysis for Crosstalk of SiC-MOSFET in a Bridge Circuit and Its Active-Clamped Driver Based Suppression Methods

Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair

Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Three-dimensional Fully-coupled Electromagnetic Field Modeling and Characterization of SiC MOSFET Switching Transients

Fast SiC Switching Limits for Pulsed Power Applications

Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications

SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Ultrafast Switching of SiC MOSFETs for High-Voltage Pulsed-Power Circuits