Abstract:Silicon carbide three-level active neutral point clamped converters (SiC 3L-ANPC) have emerged as promising solutions for medium-voltage high-capacity applications. However, compared to traditional two-level converters, they exhibit a relatively higher presence of stray parameters. The combined impact of high , and multiple stray parameters during the switching transient process can lead to non-ideal behaviors, including voltage and current overshoots, along with oscillations. These issues contribute to increased switching losses and limitations in power handling. Therefore, a thorough evaluation of the switching transient process becomes imperative to ensure the proper design and protection of 3L-ANPC converters. An analytical model is proposed in this article that accurately characterizes the switching transient process of SiC 3L-ANPC converters. The model is developed based on a comprehensive analysis of the switching transient mechanism. By focusing on specific pivotal moments within the transient process, the model significantly reduces computational time. Moreover, these distinct moments carry explicit physical significance and possess universal applicability. Experimental results validate the effectiveness of the proposed model, showcasing a maximum calculation error of less than 6% for transient overshoots. The insights presented in this article provide guidance for designing circuit parameters in SiC 3L-ANPC converters, aiding in the mitigation of overvoltage issues.

Three-dimensional Fully-coupled Electromagnetic Field Modeling and Characterization of SiC MOSFET Switching Transients

Film Capacitors ESL Extraction Based on SiC MOSFET Switching Transient Process

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair

A Coupled 3D FEM-Distribute Circuit Model for Numerical Analysis of Small Time Scale Transients of an IGBT based Inverter

Transient analysis of Si-MOS and SiC-JFET cascode power switches

Coupled Distribute Circuit-3D FEM Model to Simulate the Transient Electromagnetic Performances of IGBTs

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Mechanism Segmentation Transient Model of SiC MOSFETs for Multi-rate Electro-thermal Simulation

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Piecewise Analytical Transient Model of SiC MOSFET and SiC Schottky Diode Pair

Event-Driven Approach with Time-Scale Hierarchical Automaton for Switching Transient Simulation of SiC-Based High-Frequency Converter

Accurate Time-segmented Loss Model for SiC MOSFETs in Electro-thermal Multi-Rate Simulation

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

Time-Domain and Frequency-Domain Analysis of SiC MOSFET Switching Transients Considering Transmission of Control, Drive, and Power Pulses

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

An Efficient Nonlinear Capacitance Model for SOIFET Used As A Switch

Multi-Time Scale Transient Models for Power Semiconductor Devices (PartⅠ: Switching Characteristics and Transient Modeling)

Mechanism and Analytical Model for Switching Transient Process in SiC 3L-ANPC Converter