Abstract:The nonlinear junction capacitances of power devices are critical for the switching transient, which should be fully considered in the modeling and transient analysis, especially for high-frequency applications. The silicon carbide (SiC) MOSFET combined with SiC Schottky Barrier Diode (SBD) is recognized as the proposed choice for high-power and high-frequency converters. However, in the existing SiC MOSFET models only the nonlinearity of gate-drain capacitance is considered meticulously, but the drain-source capacitance, which affects the switching commutation process significantly, is generally regarded as constant. In addition, the nonlinearity of diode junction capacitance is neglected in some simplified analysis. Experiments show that without full consideration of nonlinear junction capacitances, some significant deviations between simulated and measured results will emerge in the switching waveforms. In this paper, the nonlinear characteristics of drain-source capacitance in SiC MOSFET are studied in detail, and the simplified modeling methods for engineering applications are presented. On this basis, the SiC MOSFET model is improved and the simulation results with improved model correspond with the measured results much better than before, which verify the analysis and modeling.

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

An Efficient Nonlinear Capacitance Model for SOIFET Used As A Switch

A Neuro-Space Mapping Method for Harmonic Interference Prediction of SOIFET Radio Frequency Switches

Scalable RFCMOS Model for 90 Nm Technology

A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Nonlinearity Modeling of Contact-type RF MEMS Switch Based on Passive Intermodulation Analysis

MOSFET Modeling for RF IC Design

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Three-dimensional Fully-coupled Electromagnetic Field Modeling and Characterization of SiC MOSFET Switching Transients

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Accurate Small-Signal Model and Its Parameter Extraction in Rf Silicon Mosfets

Efficient Nonlinear Behavior Modeling Method for Voltage-Variable Capacitors

CMOS/SOI ICs simulation and parameter extraction

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

Investigation of Nonlinearity in RF Metal Contacts Induced by the Tunneling Effect

DC and RF Modeling of Si Schottky Diodes

Rf Characterization And Modeling Of Cmos Schottky Diodes

An Accurate Parameter Extraction Method for RF LDMOSFET Small-Signal Model