Abstract:This article presents a datasheet-driven empirical model of silicon carbide (SiC) MOSFET, in which both the static ${I}$ – ${V}$ and dynamic ${C}$ – ${V}$ characteristics are accurately captured by using nonsegmented empirical equations. Compared with the existing models, this model features on describing the first quadrant conduction ${I}$ – ${V}$ characteristics through nonsegmented empirical equations while considering the intrinsic physical mechanisms, which is beneficial for improving the convergence capability. Moreover, the nonlinear Miller capacitance ${C}_{gd}$ is accurately captured considering the shielding effect caused by the adjacent p-wells. Apart from the abovementioned added features, a parameter extraction procedure is also proposed, in which all the parameter values could be directly extracted from the data provided in the commercial datasheet. The accuracy of the proposed model is verified through the comparisons between the modeling results and experimental data from the datasheet. Furthermore, the convergence capability of the proposed model is verified by simulating a seven-level cascaded H-bridge (CHB) inverter, in which 12 devices are included. The experimental double pulse test is finally carried out to verify the feasibility of the proposed model in simulating the dynamic transients.

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