Abstract:The improved RF performance of silicon-based technologies over the years and their potential use in telecommunication applications has increased the research in RF modelling of MOS transistors. Especially for analog circuits, accurate RF small signal and large signal transistor models are required. In this paper, we propose an accurate, non-quasi-static, large signal (i.e., nonlinear) RF MOSFET model. Our model consists of a current source and a charge source at the drain terminal and a charge source at the gate terminal. The sources' magnitudes are calculated from the gate-bias and drain-bias dependent elements of the MOSFET equivalent circuit. The MOSFET equivalent circuit elements on itself are extracted from S-parameters at all gate voltages and drain voltages that occur in large signal operation. The accuracy of the equivalent circuit based model is validated by large signal RF measurements using a nonlinear network measurement system. Large signal modelling results using the BSIM3v3 compact model are also presented. Both the equivalent circuit based model and the BSIM3v3 model meet the requirements to describe accurately the RF large signal behaviour of MOS transistors.

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

An Improved Millimeter Wave MOSFET Model Based on BSIM4

Scalable RFCMOS Model for 90 Nm Technology

An Improved Small Signal Equivalent Circuit Modeling Based On 65nm CMOS Technology

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

RF CMOS Transistor Equivalent Circuit Model Up to 66 GHz

Multi-bias Small Signal Circuit Model for FinFET Transistors

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

Improved Compact RF-Noise Modelling for Deep SubMicron MOSFETs

A 220-Ghz Compact Equivalent Circuit Model of CMOS Transistors

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

66 GHz Bias‐dependent Equivalent Circuit Model for CMOS Transistor Based on 90 Nanometers CMOS Technology

An Improved 220-GHz Small-Signal Equivalent Circuit Model Considering Stray Capacitance Effect

CMOS 90 Nm Multi -Bias Transistor Model Up to 66 GHz

A Millimeter‐wave Scalable Small Signal Model of RF CMOS Transistor Against Number of Fingers

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

An Improved Small-Signal Equivalent Circuit Model Considering Channel Current Magnetic Effect

Complete Model for CMOS Transistors Up to 66Ghz

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

A new substrate model and parameter extraction method for DNW RF MOSFETs