Abstract:This paper presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first derived. The subcircuit includes a substrate network that accounts for the signal coupling occurring at HF from the drain to the source and the bulk. It is shown that the latter mainly affects the output admittance Y22. The bias and geometry dependence of the subcircuit components, leading to a scalable model, are then discussed with emphasis on the substrate resistances. Analytical expressions of the Y parameters are established and compared to measurements made on a 0.25-/spl mu/m CMOS process. The Y parameters and transit frequency simulated with this scalable model versus frequency, geometry, and bias are in good agreement with measured data. The nonquasi-static effects and their practical implementation in the Spice subcircuit are then briefly discussed. Finally, a new thermal noise model is introduced. The parameters used to characterize the noise at HF are then presented and the scalable model is favorably compared to measurements made on the same devices used for the S-parameter measurement.

Bsim3 Rf Models For Mos Transistors: A Novel Technique For Substrate Network Extraction

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Scalable RFCMOS Model for 90 Nm Technology

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Accurate Small-Signal Model and Its Parameter Extraction in Rf Silicon Mosfets

A new substrate model and parameter extraction method for DNW RF MOSFETs

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

MOS transistor modeling for RF IC design

New RF intrinsic parameters extraction procedure for advanced MOS transistors

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

A Millimeter‐wave Scalable Small Signal Model of RF CMOS Transistor Against Number of Fingers

Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 Nm Gate-All-Around Nanosheet Transistor

A W-Band Small-Signal Equivalent Circuit Modeling Based on 28nm CMOS Process