New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Xuemei Xi,Höngmei Wang,Xing Zhang,Yangyuan Wang
DOI: https://doi.org/10.1109/ICSICT.1998.785915
1998-01-01
Abstract:A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using smoothing function. The convergence when employed in circuit simulators will be improved. Measurements on devices of varied geometry show good agreement with model predictions.
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