Abstract:A two-dimensional model for fully depleted cylindrical/surrounding gate MOSFET is proposed to address the issues that the short channel effects(SCEs) of deep submicron MOSFET are more obvious with the decrease of channel length,and that mobile charge has a significant impact on surface potential when the device is working in strong-inversion regions.Taking account of the effects of both depletion charge and free charge,an one-dimensional potential model is obtained by solving one-dimensional Poisson's equation with the boundary conditions at the interface of the channel and the oxide layer.Then the Laplace equation is solved by using the boundary conditions at the source and drain regions to construct the accurate two-dimensional surface potential model.Then analytical models for both the threshold voltage and the subthreshold slope are derived.These models are verified by device simulation software Sentaurus.The results show that the proposed model is applicable from the sub-threshold region to the strong-inversion region in different channel doping conditions,and overcomes the shortcomings that the intrinsic model is not valid under the heavy doping conditions and the model based on only depletion charge fails in the strong-inversion region.Comparisons with existing models show that the error of threshold voltage reduces by 45.5%.

ULTRA-SOI: New generation of SOI CMOS model with physics based dynamic depletion characteristics

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel

A surface-potential-based non-charge-sheet core model for fully depleted SOI MOSFET

An SOI MOSFET Model for Analog Circuit Design

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor