Abstract:We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Analytical Subthreshold Current Modeling of Nanoscale Ultra-Thin Body Ultra-Thin Box SOI MOSFETs with a Vertical Gaussian Doping Profile

Subthreshold current model of fully depleted dual material gate SOI MOSFET

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

A Subthreshold Swing Model for FD SOI MOSFET with Vertical Gaussian Profile

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Modeling for the collector current in SOI gate-controlled hybrid transistor

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Quasi-2D Compact Modeling for Double-Gate MOSFET

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect