Abstract:Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

Experimental study of SOI drive-in gate controlled hybrid transistor with annealing

A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

Design Consideration for Soi Gate Controlled Hybrid Transistor Operating at Low Voltage

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Effect of silicon film thickness on performance of SOI gate controlled hybrid transistor

A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

Back-gate Bias Effect in the SOI Gate Controlled Hybrid Transistor (GCHT)

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

Analysis of Double Trench Insulated Gate Bipolar Transistor

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Comprehensive investigations of high voltage non-punch-through double gate-injection enhanced gate transistor

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

A Novel Detachable Gate Driver Unit with Ultralow Inductance for Integrated Gate Commutated Thyristor

A Dual-Gate and Dielectric-Inserted Lateral Trench Insulated Gate Bipolar Transistor on a Silicon-on-insulator Substrate

A High Voltage LDMOS Switch Circuit with a D/A Driver in SOI Material

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity