Back-gate Bias Effect in the SOI Gate Controlled Hybrid Transistor (GCHT)

R Huang,X Zhang,XM Xi,YX Li,YY Wang

DOI: https://doi.org/10.1109/hkedm.1997.642355

1997-01-01

Abstract:Back-gate bias effect in SOI gate controlled hybrid transistor is discussed. Experimental results show the transconductance enhancement caused by the back-gate bias. Furthermore, the back-gate effect is alleviated in GCHT compared with conventional MOSFET.

What problem does this paper attempt to address?

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

Ru Huang,Xing Zhang,Yingxue Li,Yangyuan Wang

1997-01-01

Abstract:The design consideration and fabrication of gate controlled hybrid transistor (GCHT) are discussed. Detailed experimental results are used to verify the physical mechanism of GCHT. It is concluded that at high gate voltages, the driving current of GCHT is mainly pure BJT current, not MOS current which is reported inLB4]. The conclusion agrees with the theory proposed earlier by us[5,6]. The driving capability of the fabricated GCHT is about 1.7 and 6.5 times higher than the corresponding pure BJT and pure MOSFET respectively, with the highest current gain be 10000. The switching-on voltage is about 0.3V and 0.7V lower than pure BJT and pure MOSFET, with subthreshold swing be 66mV/dce. The inverter composed of GCHTs has good DC transfer characteristic even at Vdd=0.8V. Thus GCHT is promising for low voltage low power applications and analogue circuits as well.
Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

Ru Huang,Xing Zhang,Yangyuan Wang

IF: 1.019

2000-01-01

Chinese Journal of Electronics

Abstract:The breakdown characteristics of SOI gate controlled hybrid transistor (GCHT) are investigated in this paper for the first time. Compared with the SOI MOSFET, SOI GCHT, with the gate and the body tied together, experimentally exhibits improved breakdown behavior, especially for the lately proposed drive-in gate controlled hybrid transistor (DGCHT) with an additional lightly doped region near the drain. It is concluded that as a result of the hybrid operating mechanism, the conventional contradiction between the breakdown voltage, the current gain and the channel length is greatly alleviated in GCHT and DGCHT, making device design more flexibly and thus device performance more easily optimized. The better breakdown characteristics of the hybrid transistors are explained qualitatively and analyzed semiquantitatively in this paper.
Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

ru huang,yang yuan wang,ruqi han

DOI: https://doi.org/10.1109/HKEDM.1998.740201

1998-01-01

Abstract:A subthreshold current model for the SOI short channel gate controlled hybrid transistor(GCHT) is presented in this paper for the first time, considering the mobile charge affected by the gate voltage and the base voltage simultaneously. The influence of the channel length and the drain voltage on the performance of GCHT is investigated. The model predictions agree well with numerical results and experimental data.
Effect of silicon film thickness on performance of SOI gate controlled hybrid transistor

Ru Huang,Yangyuan Wang

1999-01-01

Abstract:In this paper, the effect of silicon film thickness on the short channel effect, the threshold voltage, the subthreshold swing and the zero-gate voltage current (leakage current) of SOI gate controlled hybrid transistor (GCHT) is analyzed for the firs time on the basis of numerical simulation results and experimental data. The influence of the structural and technological parameters on the effect of the silicon film thickness is also discussed. It can be concluded that compared with conventional SOI MOSFET, SOI GCHT has lower sensitivity to the silicon film thickness variation. SOI GCHT can alleviate the performance degradation due to the silicon film thinning when the device feature size is down to deep submicron. Thus as a result of its unique operating mechanism, SOI GCHT provides a novel path of the deep submicron device development.
A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

R Huang,X Zhang,YY Wang

DOI: https://doi.org/10.1109/16.711379

1998-01-01

Abstract:A novel SOI drive-in gate controlled hybrid transistor is put forward in this paper. Compared with previous hybrid transistors, with the former advantages retained, drive-in gate controlled hybrid transistor (DGCHT) can obtain short channel without any submicron technology. And the Early voltage can be increased in spite of the depleted base surface. The breakdown characteristics can be improved in spite of the shorter channel length and the high current gain.
Modeling for the collector current in SOI gate-controlled hybrid transistor

Ru Huang,Yangyuan Wang,Ruqi Han

1997-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:Based on its physical mechanism, a new analytical model for the collector current in SOI gate-controlled hybrid transistor (GCHT) is presented. Considering both drift and diffusion components, the gated current model is founded. The relation between the surface potential and the applied base bias is investigated for the first time, which can explain that the collector current for the hybrid transistor and the bipolar transistor tend to merge at high base bias. The calculated results using this model are in good agreement with the PISCES numerical results and the experimental data.
Experimental study of SOI drive-in gate controlled hybrid transistor with annealing

Ru Huang,Xing Zhang,Yingxue Li,Yangyuan Wang

1998-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:The design consideration and fabrication of the drive-in gate controlled hybrid transistor (DGCHT) are discussed. Good features have been exhibited experimentally, such as high current drivability, small subthreshold swing and low switching-on voltage. Compared with previous hybrid transistors, without any sub-micron technology, DGCHT can obtain short channel with small Early effect and can improve breakdown characteristics still with high current gain. Good compromise between the cutoff frequency and breakdown voltage can e acquired for DGCHT. The Early effect and breakdown characteristic are also analyzed theoretically. Moreover, the inverter composed of DGCHTs can still work well when the supply voltage is down to 1 V. Thus DGCHT may have lower product of power dissipation and time delay, which make it applicable in low power and low voltage circuits. And DGCHT is promising in analog circuits as well due to its high current gain.
Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Shifeng Zhang,Yan Han,Koubao Ding,Bin Zhang,Jiaxian Hu

DOI: https://doi.org/10.1016/j.microrel.2011.02.009

IF: 1.6

2011-01-01

Microelectronics Reliability

Abstract:The hot-carrier-induced (HCI) degradations of silicon-on-insulator (SOI) lateral insulated gate N-type bipolar transistor (NLIGBT) are investigated in detail by DC voltage stress experiment, TCAD simulation and charge pumping test. The substrate current Isub and on-state resistance Ron at different voltage stress conditions are measured to assess the HCI effect on device performance. The electric field and impact ionization rate are simulated to assist in providing better physical insights. And charge pumping current is measured to determinate the front-gate interface states density directly. The degradation mechanisms under different gate voltage stress conditions are then presented and summarized.
Design Consideration for Soi Gate Controlled Hybrid Transistor Operating at Low Voltage

R Huang,B Yang,X Zhang,YY Wang

DOI: https://doi.org/10.1109/icsict.1998.786088

1998-01-01

Abstract:The comprehensive design guidelines for SOI gate controlled hybrid transistor (GCHT) are provided in this paper for the first time, especially for GCHT operating at low voltage, which is an advantageous operating region of GCHT. The investigated mechanisms in this study involve short channel effects, current driving capability, device off-characteristics and open-circuit voltage gain. The design curves for low operating voltage are presented by synthesizing the results, with tradeoffs between different parameter requirements for different effects illustrated explicitly. The allowable design region is greatly-broadened, pointing out the direction for deep submicron device development
Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure

Xiaorong Luo,Daping Fu,Lei Lei,Bo Zhang,Zhaoji Li,Shengdong Hu,Zhengyuan Zhang,Zhicheng Feng,Bin Yan

DOI: https://doi.org/10.1109/TED.2009.2024027

IF: 3.1

2009-01-01

IEEE Transactions on Electron Devices

Abstract:A novel silicon-on-insulator (SOI) high-voltage device structure and its eliminating back-gate bias effects are presented. The structure is characterized by a compound buried layer (CBL) made of two oxide layers and a polysilicon layer between them. At the high-voltage blocking state, holes collected on the polysilicon bottom interface shield the SOI layer and the upper buried oxide (UBO) layer fr...
Piecewise model for collector current in SOI gate controlled hybrid transistor

Ru Huang,Yangyuan Wang,Ruqi Han

1997-01-01

Abstract:A piecewise model for collector current in gate-controlled hybrid transistors (GCHT) is presented. The output characteristics under different ranges of base biases are investigated. Compared to the all-operating-region model we proposed earlierLB10], the piecewise model relates the terminal current to terminal voltages directly, giving a more explicit physical insight into the operation mechanism. Thus as well as the saving of the computational time, fast parameter extraction will be possible. The calculated results using this model agree well with those obtained from the accurate all-operating-region model and the experimental data.
Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Liu Chang,Lu Ji-Wu,Wu Wang-Ran,Tang Xiao-Yu,Zhang Rui,Yu Wen-Jie,Wang Xi,Zhao Yi

DOI: https://doi.org/10.7498/aps.64.167305

IF: 0.906

2015-01-01

Acta Physica Sinica

Abstract:With the continued device scaling and the introduction of new device structures, MOSFET reliability phenomena arising from the hot carrier injection (HCI) stress have received extensive attention from both the academia and the industry community. In this work, the degradations of ultra-scaled silicon on insulator (SOI) MOSFETs under the HCI stress are investigated on devices of different gate lengths (L=30-150 nm). Our experimental data demonstrate that the time evolutions of the threshold voltage change (Vth) under the HCI stress for different gate length devices are the same, and the magnitude of Vth reduces for the shorter devices. The degradation of the device under the HCI stress should be due to both the channel hot carrier (CHC) effect and the bias temperature instability (BTI) effect. The distribution and magnitude of the electric field along the MOSFET's channel are analyzed. It is confirmed that besides the well-known CHC effect in the depletion region close to the drain side, a strong BTI effect co-exists in the channel close to the source side. This degradation mechanism is different from the conventional HCI stress. With the gate length decreasing, the contribution of the aforementioned BTI effect becomes larger, and it dominates in the degradation. One feature of the BTI effects is that the corresponding degradation is small when the gate length is short. This is consistent with our experimental result that the change of Vth is small for the device of short gate length under the accelerated HCI stress. The time evolution of Vth can be described by the equation Vth=A•tn, where A is a constant, t is the stress time, and n is the power law exponent obtained by the curve fitting. In this study, the power law exponent n of pMOSFET is larger than that of nMOSFET. This experimental fact can lead to the point that the BTI effect exists during the HCI stress because the BTI effect in ultra-scaled pMOSFETs is more significant than that in nMOSFETs. The stress-recover experiments of the HCI stress on MOSFTTs show larger recovery in device of shorter gate length. It is found that the ratio of the recovery to the total degradation in the 30 nm gate-length device is almost twice as large as that in the 150 nm device. The degradation from the CHC effect has no recovery, and the larger recovery in the shorter-channel device implies the larger component of the BTI degradation. Another intriguing fact is that our experimental result on SOI MOSFET is inconsistent with the recently reported result on FinFET. We argue that the reported stronger HCI degradation in FinFET may not be ascribed only to the stronger electric field in the shorter channel, but also to the fact that the FinFET' channel is three-dimensionally surrounded by the gate dielectric. This kind of three-dimensional structure significantly increases the chance for electrons or holes to be injected into the dielectric layer. Therefore the HCI reliability of planar SOI MOSFETs may be better than that of FinFETs at the same level of gate length. In conclusion, the BTI effect is an important source of the degradation during the HCI stress in ultra-short-channel device, and it is no more negligible in analyzing the underlying physical mechanism.
Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Huang Ru,Bu Weihai,Zhang Xing,Wang Yangyuan

DOI: https://doi.org/10.1007/bf02713940

2001-01-01

Abstract:We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.
Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Wangran Wu,J. Lu,Chang Liu,Heng Wu,Xiaoyu Tang,Jiabao Sun,Rui Zhang,Wenjie Yu,Xi Wang,Yi Zhao

DOI: https://doi.org/10.1016/j.microrel.2016.03.002

2016-01-01

Abstract:In this work, a comprehensive study of the bias temperature instability (BTI) degradation has been performed on SOI MOSFETs with various gate lengths (from 30nm to 150nm). For both nMOSFETs and pMOSFETs, the BTI degradation is alleviated when the gate length decreases. A new model was proposed to explain the observed gate length dependence of the BTI degradation. The decrease in the BTI degradation of MOSFETs with shorter gate length is caused by the decrease in normal electric field across the interface of Si-dielectric, which was concept-proofed by TCAD simulations.
Experimental Investigation on the Back-Gate Modulation of Extra-Thin Body Pmosfets

Rui Su,JunKang Li,Rui Zhang

DOI: https://doi.org/10.1109/cstic61820.2024.10531957

2024-01-01

Abstract:The back-gate modulation of body silicon-on-insulator (SOI) pMOSFETs with different channel thicknesses is systematically investigated by experiments and simulations. It is found that the carrier density and distribution would be hardly affected by the back-gate voltage for the 2-nm-thick extra-thin body (ETB) SOI pMOSFET, which is due to the strong surface roughness scattering simultaneously from the front and back gate interface. In this case, both front and back gate stacks with high-quality interfaces are crucial for the carrier transport properties in the ETB SOI pMOSFET.
Analysis of the Back-Gate Effect on the Breakdown Behavior of Lateral High-Voltage Soi Transistors

Qiao Ming,Zhang Bo,Li Zhao-Ji,Fang Jian,Zhou Xian-Da

DOI: https://doi.org/10.7498/aps.56.3990

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:A novel back-gate reduced bulk field concept which makes a breakthrough in improving the vertical breakdown voltage of high voltage SOI transistors is proposed. The mechanism of the improved breakdown characteristics is that the electric field distributions of the active region are modulated by the interface charges induced by the back-gate voltage. The bulk electric field at the drain side is reduced, the bulk electric field at the source side is increased, and the breakdown voltage of the high voltage SOI device is improved. The impact of the back-gate bias on thick film SOI LDMOS (over 600 V) is discussed via two-dimensional simulations. When the back-gate bias is 330V, the breakdown voltage of the three-zone SOI double RESURF LDMOS is 1020V, which is 47.83% greater than that of a conventional LDMOS. The novel concept presents a new method for realizing over 600 V high voltage power device and high voltage integrated circuit.
Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

F. Udrea,U. N. K. Udugampola,T. Trajkovic,G. A. J. Amaratunga

DOI: https://doi.org/10.1109/ispsd.2007.4294972

2007-01-01

Abstract:In this paper we report a lateral insulated gate bipolar device with an embedded anti-parallel diode (body diode) for use in half bridge or full bridge configurations. The device offers ultra-fast switching speed and low on-state resistance and is based on an SOI proprietary process earlier reported by us (F. Udrea, et. al., 2004). The device features double CMOS gates operated from an integrated CMOS controller. When the anode gate is biased negatively with respect to the anode a hole inversion layer is formed at the surface of the n-well which leads to enhanced injection of holes and therefore a lower on-state resistance. When the device is turned-off by inactivating both the cathode and anode gates the 'extra' inversion layer emitter is physically suppressed and the device turns-off fast. The device is experimentally demonstrated with full set of measured characteristics and compared on the same wafer with a classical LIGBT, an anode-shorted LIGBT and an LDMOSFET. It is shown that the Double Gate Enhanced Injection device offers a remarkably better switching/on-state/breakdown trade-off and, very importantly in some applications, it benefits from a fast, low on-state, embedded anti-parallel diode.
Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs

Da Wang,Li Zheng,Xinhong Cheng,Lingyan Shen,Xiaobo Liu,Shaoyu Liu,Yufei Tian,Junhong Feng,Yuehui Yu

DOI: https://doi.org/10.1109/ted.2023.3266716

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The physical mechanism of the substrate biasing effect (SBE) in a high-voltage monolithically-integrated GaN-on-SOI half bridge with partial recessed-gate high-electron-mobility transistors (HEMTs) is comprehensively analyzed by TCAD simulation. The SBE originates from the capacitive coupling of the buffer layer and the buffer traps, which can be effectively suppressed by the GaN-on-SOI platform with the top Si shorted to the source technology. The simulations show that the ${R}_{ ext {ON}}$ of high side HEMT on the GaN-on-SOI platform with the top Si shorted to the source is $0.223 {Omega }$ and does not degrade with the bus voltage increase, while the ${R}_{ ext {ON}}$ increases from 0.223 to $0.900 {Omega }$ for the case on GaN-on-Si platform when the bus voltage increases to 400 V. In addition, for GaN-on-SOI platform with the top Si shorted to the source of HEMTs, the crosstalk can be effectively suppressed and the self-heating effect does not aggravate. Moreover, the integrated half bridge on GaN-on-SOI platform with the top Si shorted to the source shows lower overshoot current, tail current and switching power consumption compared to the half bridge made of two discrete HEMTs on GaN-on-Si platform.

engineering, electrical & electronic,physics, applied
Analysis of back-gate effect on breakdown behaviour of over 600 v SOI LDMOS transistors

Ming Qiao,B. Zhang,Zhaoji Li,Jian Fang

DOI: https://doi.org/10.1049/el:20071978

2007-01-01

Electronics Letters

Abstract:A novel concept of SOI BG REBULF (back-gate reduced bulkfield), which breaks through the limitation of vertical breakdown voltage of lateral high-voltagc SOI transistors, is proposed. The mechanism of the improved breakdown behaviour is the reduction of bulk electric field in silicon due to field-modulated effect of the interface charges induced by the back-gate voltage. The impact of the back-gate bias on the breakdown behaviour of over 600 V SOI LDMOS transistors is discussed. When the back-gate bias is 330 V, the breakdown voltage of the BG REBULF SOI LDMOS is 1020 V, which is 47.8% greater than that of the conventional SOI LDMOS.
Research of Hot-carrier-induced Degradation on SOI NLIGBT

Wei ZHANG,Shifeng ZHANG,Yan HAN,Huanting WU

DOI: https://doi.org/10.3969/j.issn.1000-3819.2012.04.001

2012-01-01

Abstract:The hot-carrier-induced (HCI) degradations on SOI NLIGBT are investigated by DC voltage stress experiment, TCAD simulation and charge pumping test. The HCI effect on device performance is assessed by measuring the substrate current I sub and on-state resistance R on at different voltage stress conditions. The electric field and impact ionization rate are simulated to obtain better physical insights. And the front-gate interface state density can be determined directly by measuring charge pumping current. Finally, the degradation mechanisms under different gate voltage stress conditions are presented.

Back-gate Bias Effect in the SOI Gate Controlled Hybrid Transistor (GCHT)

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

Effect of silicon film thickness on performance of SOI gate controlled hybrid transistor

A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

Modeling for the collector current in SOI gate-controlled hybrid transistor

Experimental study of SOI drive-in gate controlled hybrid transistor with annealing

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Design Consideration for Soi Gate Controlled Hybrid Transistor Operating at Low Voltage

Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure

Piecewise model for collector current in SOI gate controlled hybrid transistor

Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Experimental Investigation on the Back-Gate Modulation of Extra-Thin Body Pmosfets

Analysis of the Back-Gate Effect on the Breakdown Behavior of Lateral High-Voltage Soi Transistors

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs

Analysis of back-gate effect on breakdown behaviour of over 600 v SOI LDMOS transistors

Research of Hot-carrier-induced Degradation on SOI NLIGBT