Abstract:With the continued device scaling and the introduction of new device structures, MOSFET reliability phenomena arising from the hot carrier injection (HCI) stress have received extensive attention from both the academia and the industry community. In this work, the degradations of ultra-scaled silicon on insulator (SOI) MOSFETs under the HCI stress are investigated on devices of different gate lengths (L=30-150 nm). Our experimental data demonstrate that the time evolutions of the threshold voltage change (Vth) under the HCI stress for different gate length devices are the same, and the magnitude of Vth reduces for the shorter devices. The degradation of the device under the HCI stress should be due to both the channel hot carrier (CHC) effect and the bias temperature instability (BTI) effect. The distribution and magnitude of the electric field along the MOSFET's channel are analyzed. It is confirmed that besides the well-known CHC effect in the depletion region close to the drain side, a strong BTI effect co-exists in the channel close to the source side. This degradation mechanism is different from the conventional HCI stress. With the gate length decreasing, the contribution of the aforementioned BTI effect becomes larger, and it dominates in the degradation. One feature of the BTI effects is that the corresponding degradation is small when the gate length is short. This is consistent with our experimental result that the change of Vth is small for the device of short gate length under the accelerated HCI stress. The time evolution of Vth can be described by the equation Vth=A•tn, where A is a constant, t is the stress time, and n is the power law exponent obtained by the curve fitting. In this study, the power law exponent n of pMOSFET is larger than that of nMOSFET. This experimental fact can lead to the point that the BTI effect exists during the HCI stress because the BTI effect in ultra-scaled pMOSFETs is more significant than that in nMOSFETs. The stress-recover experiments of the HCI stress on MOSFTTs show larger recovery in device of shorter gate length. It is found that the ratio of the recovery to the total degradation in the 30 nm gate-length device is almost twice as large as that in the 150 nm device. The degradation from the CHC effect has no recovery, and the larger recovery in the shorter-channel device implies the larger component of the BTI degradation. Another intriguing fact is that our experimental result on SOI MOSFET is inconsistent with the recently reported result on FinFET. We argue that the reported stronger HCI degradation in FinFET may not be ascribed only to the stronger electric field in the shorter channel, but also to the fact that the FinFET' channel is three-dimensionally surrounded by the gate dielectric. This kind of three-dimensional structure significantly increases the chance for electrons or holes to be injected into the dielectric layer. Therefore the HCI reliability of planar SOI MOSFETs may be better than that of FinFETs at the same level of gate length. In conclusion, the BTI effect is an important source of the degradation during the HCI stress in ultra-short-channel device, and it is no more negligible in analyzing the underlying physical mechanism.

Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

Experimental study of SOI drive-in gate controlled hybrid transistor with annealing

A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Back-gate Bias Effect in the SOI Gate Controlled Hybrid Transistor (GCHT)

Design Consideration for Soi Gate Controlled Hybrid Transistor Operating at Low Voltage

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Effect of silicon film thickness on performance of SOI gate controlled hybrid transistor

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Modeling for the collector current in SOI gate-controlled hybrid transistor

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Analysis of Double Trench Insulated Gate Bipolar Transistor

Analysis of the Back-Gate Effect on the Breakdown Behavior of Lateral High-Voltage Soi Transistors

Gate Length Dependence of Hot Carrier Injection Degradation in Short Channel Silicon on Insulator Planar Mosfet

Piecewise model for collector current in SOI gate controlled hybrid transistor

Analysis of back-gate effect on breakdown behaviour of over 600 v SOI LDMOS transistors

Study on the Optimization of Off-State Breakdown Performance of P-Gan HEMTs

Analysis of Simulation Approaches for the Breakdown Characteristics of SOI High-Voltage PMOS in a Fixed Power Supply

Optimizing Breakdown Voltage and On-State Resistance by Modulating the Barrier Height along 2DEG Channel for Power P-Gan HEMTs