Abstract:This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In0.6Ga0.4As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption.

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

Experimental study of SOI drive-in gate controlled hybrid transistor with annealing

Design Consideration for Soi Gate Controlled Hybrid Transistor Operating at Low Voltage

Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

Back-gate Bias Effect in the SOI Gate Controlled Hybrid Transistor (GCHT)

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

Effect of silicon film thickness on performance of SOI gate controlled hybrid transistor

Piecewise model for collector current in SOI gate controlled hybrid transistor

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Modeling for the collector current in SOI gate-controlled hybrid transistor

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

Analysis of Double Trench Insulated Gate Bipolar Transistor

A gate driver based soft-switching SiC bipolar junction transistor

A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy

Digital-circuit Analysis of Short-Gate Tunnel FETs for Low-Voltage Applications

High-performance and Low-Power Source-Gated Transistors Enabled by a Solution-Processed Metal Oxide Homojunction

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

A PTG-LDMOST for the Smart Power ICs Amplification

Study of the SOI LDMOS with Low Conduction Loss and Less Gate Charge

Ultra Low Power Circuits Design Based on III-V Group Heterojunction Tunnel Field Effect Transistor