Abstract:We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.

Piecewise model for collector current in SOI gate controlled hybrid transistor

Modeling for the collector current in SOI gate-controlled hybrid transistor

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

Analytical modeling for the collector current in SOI gate-controlled hybrid transistor

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Experimental study of SOI gate controlled hybrid transistor (GCHT) appropriate for low voltage low power circuits

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Back-gate Bias Effect in the SOI Gate Controlled Hybrid Transistor (GCHT)

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

An improved model for InP/InGaAs double heterojunction bipolar transistors

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

Effect of silicon film thickness on performance of SOI gate controlled hybrid transistor

A High-Performance SOI Drive-in Gate Controlled Hybrid Transistor (DGCHT)

A large-signal model for GaInP/GaAs heterojunction bipolar transistors

Experimental study of SOI drive-in gate controlled hybrid transistor with annealing