Analytical modeling for the collector current in SOI gate-controlled hybrid transistor

Ru Huang,Yang Yuan Wang,RuQi Han

DOI: https://doi.org/10.1016/S0038-1101(96)00118-9

IF: 1.916

1996-01-01

Solid-State Electronics

Abstract:null

What problem does this paper attempt to address?

Modeling for the collector current in SOI gate-controlled hybrid transistor

Ru Huang,Yangyuan Wang,Ruqi Han

1997-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:Based on its physical mechanism, a new analytical model for the collector current in SOI gate-controlled hybrid transistor (GCHT) is presented. Considering both drift and diffusion components, the gated current model is founded. The relation between the surface potential and the applied base bias is investigated for the first time, which can explain that the collector current for the hybrid transistor and the bipolar transistor tend to merge at high base bias. The calculated results using this model are in good agreement with the PISCES numerical results and the experimental data.
Piecewise model for collector current in SOI gate controlled hybrid transistor

Ru Huang,Yangyuan Wang,Ruqi Han

1997-01-01

Abstract:A piecewise model for collector current in gate-controlled hybrid transistors (GCHT) is presented. The output characteristics under different ranges of base biases are investigated. Compared to the all-operating-region model we proposed earlierLB10], the piecewise model relates the terminal current to terminal voltages directly, giving a more explicit physical insight into the operation mechanism. Thus as well as the saving of the computational time, fast parameter extraction will be possible. The calculated results using this model agree well with those obtained from the accurate all-operating-region model and the experimental data.
Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

ru huang,yang yuan wang,ruqi han

DOI: https://doi.org/10.1109/HKEDM.1998.740201

1998-01-01

Abstract:A subthreshold current model for the SOI short channel gate controlled hybrid transistor(GCHT) is presented in this paper for the first time, considering the mobile charge affected by the gate voltage and the base voltage simultaneously. The influence of the channel length and the drain voltage on the performance of GCHT is investigated. The model predictions agree well with numerical results and experimental data.
Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Huang Ru,Bu Weihai,Zhang Xing,Wang Yangyuan

DOI: https://doi.org/10.1007/bf02713940

2001-01-01

Abstract:We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.
A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Zhijun Lyu,Hongliang Lu,Chen Liu,Yuming Zhang,Yimen Zhang,Yi Zhu,Jiale Sun,Bin Lu,Ziji Jia,Mengqing Zhao

DOI: https://doi.org/10.1109/TED.2022.3195474

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:Gate–source overlap tunneling FETs (GSO-TFETs) as a novel ternary device are very promising in low-power neuromorphic circuits. In this article, an accurate potential model of the ternary GSO-TFETs is presented for the face-tunnel region considering the quasi-mobile charges (QMCs) based on the analysis of the face-tunnel mechanism. Then a potential-based analytical current model is developed for the first time to predict the face-tunnel process and line-tunnel current simultaneously with both the gate and the drain modulations. The modeling results are validated with TCAD simulations and good agreement within a wide biasing range is achieved, which indicates the great potential of this SPICE-friendly model for the tunneling-based ternary device in the commercial IC design fields.
A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Zhijun Lyu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Bin Lu,Xiaoran Cui,Yingxiang Zhao

DOI: https://doi.org/10.1109/TED.2018.2870249

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, a universal analytical current model for a double-gate Si-based tunnel field-effect transistor (TFET) is presented considering the effects of charges in source depletion region and channel. An accurate surface potential model is developed first by solving the pseudo-2-D Poisson equations in the depletion regions, and then is used to calculate the drain tunneling current. The modelin...
An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Huixiang Huang,Sufen Wei,Jinyan Pan,Wenbin Xu,Qiang Mei,Jinhai Chen,Li Geng,Zhengxuan Zhang,Chi-Cheng Chen

DOI: https://doi.org/10.1007/s00542-018-4227-1

2018-01-01

Microsystem Technologies

Abstract:The objective of this study is to present an analytical subthreshold swing model for fully-depleted metal-oxide semiconductor field-effect transistors (MOSFETs) with vertical Gaussian profile fabricated on modified Silicon-on-Insulator (SOI) wafers. Commercial SOI wafers are radiation hardened by Si+ implantation which creates interface traps at buried SiO2/Si interface. Considering that channel potential is affected by non-uniform doping profile combined with process- and radiation-induced traps, the model is derived based on effective conduction path effect. The proposed model is validated by comparing analytical results with numerical simulation data obtained by using commercially available Sentaurus technology computer-aided design. The model agrees well with experimental extractions of irradiated nMOSFETs. This model is believed to be able to provide better physical insight and understanding of total dose irradiated modified SOI MOSFET devices operating in subthreshold regime.
Analytical Model for High Current Density Trench Gate Mosfet

KGP Dharmawardana,GAJ Amaratunga

DOI: https://doi.org/10.1109/ispsd.1998.702712

1998-01-01

Abstract:An analytical model for the trench gate MOSFET is presented. It consists of a more accurate model for the inversion channel region, which considers the effects of doping variation, transverse and longitudinal electric fields on electron mobility. In addition, it also accurately incorporates the feature of current transfer from the accumulation channel region into the n-drift region. The model presented and validated by numerical simulation results can be useful in the initial design of optimum device structures
Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Hui Fang Xu,Guo Wei Cui,Yong Li,Wen Yang Sun,Kui Xia,Chao He,Kui Xia and Chao He

DOI: https://doi.org/10.35848/1347-4065/ad27a2

IF: 1.5

2024-03-05

Japanese Journal of Applied Physics

Abstract:A two-dimensional (2D) analytical model considering the effects of the gate oxide region, channel region, and buried oxide region for a non-lightly doped drain (LDD) SOI MOSFET is proposed. The top and bottom surface potential distributions have been derived on the basis of solving 2D Poisson's equation and using an evanescent mode analysis. The potential distribution, threshold voltage, and threshold voltage roll-off have been verified by Silvaco ATLAS simulated results for the proposed device with different device parameters. The model agrees well with the simulation results under the above-mentioned conditions. Therefore, the analytical model provides the basic designing guidance for non-LDD SOI MOSFETs.

physics, applied
A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

Guohe Zhang,Kebin Chen,Xue Zheng,Feng Liang,Zunchao Li

DOI: https://doi.org/10.1143/jjap.51.024301

IF: 1.5

2012-01-01

Japanese Journal of Applied Physics

Abstract:A subthreshold current of fully-depleted (FD) silicon-on-insulator (SOI) metal–oxide–semiconductor field effect transistors (MOSFETs) with vertical Gaussian profile is presented in the paper. The model is based on analytical approximated solution of two-dimensional Poissons' equation and Boltzmann transport equation. The front and the back channel currents are effectively derived using a novel inversion layer model and the boundary conditions which take the nonuniform doping into account. The results are matched well with the numerical simulation results obtained by Sentaurus Technology Computer-Aided Design (TCAD). The model is believed to provide a deep physical insight and understanding of FD-SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.
An analytical subthreshold I-V model of SiC MOSFETs

Yi Li,Tao Zhou,Geng Jiang,Liangbin Deng,Zixuan Guo,Qiaolin Sun,Bangyong Yin,Yuqiu Yang,Junyao Wu,Huan Cai,Jun Wang,Jungang Yin,Qin Liu,Linfeng Deng

DOI: https://doi.org/10.1016/j.mejo.2024.106138

IF: 1.992

2024-02-27

Microelectronics Journal

Abstract:In this article, an analytical I–V model for calculating subthreshold current of SiC MOSFETs is presented. This model starts with planar MOSFETs and utilizes the one-dimensional Poisson's equation to derive an analytical expression for the surface potential. Subsequently, it employs this expression as a foundation for subthreshold current calculations. Then the model is extended to DMOSFETs based on the fact that channel current formation mechanism of DMOSFETs is similar to that of planar MOSFETs. Comparative analysis of our model calculations with two-dimensional numerical simulation software reveals that our model exhibits a high degree of agreement in the case of planar MOSFETs and DMOSFETs. Interface traps were also considered in our analytical model, which agrees well with experimental data published elsewhere. Furthermore, the model retains a certain degree of accuracy and predictive capability even in the presence of short-channel effect. Our subthreshold model becomes complementary to existing models which only describe the I–V characteristics of SiC MOSFETs when the transistors operate above the threshold voltages.

engineering, electrical & electronic,nanoscience & nanotechnology
Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Li Zunchao,Jiang Yaolin,Zhang Lili

DOI: https://doi.org/10.3321/j.issn:0253-987x.2006.10.012

2006-01-01

Abstract:A hetero-gate SOI MOSFET structure with asymmetric halo doping is proposed to improve the short channel effect and driving current.The impurity with higher concentration is injected into the channel end near the source and two materials with different work function are put together to form the gate.The analytical models of surface potential and threshold voltage for the fully depleted device are constructed by solving the 2D potential Poisson's equation.It is shown that the proposed structure can effectively suppress drain induced barrier lowering and hot carrier effect,and the threshold voltage clearly exhibits the considerable reverse short channel effect when the channel length is less than 100 nm.The two electric field peaks near the interface of halo and gate materials will greatly increase the transfer speed of carriers passing through the channel.The derived analytical models accord with the result from two-dimension device simulator MEDICI very well.
Subthreshold current model of fully depleted dual material gate SOI MOSFET

Jun Su,Zunchao Li,Lili Zhang,苏军,李尊朝,张莉丽

2007-01-01

Abstract:Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson's equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.
Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region

Sandeep Kumar,Arun Kumar Chatterjee,Rishikesh Pandey

DOI: https://doi.org/10.1002/jnm.3209

2024-01-20

International Journal of Numerical Modelling Electronic Networks Devices and Fields

Abstract:Abstract In this work, we have presented an analytical model for a recently proposed symmetrical recessed double gate junctionless field‐effect transistor (R_DGJLFET) operating in subthreshold region. The model has been developed by solving a two‐dimensional Poisson's equation in three continuous rectangular silicon regions, resulting in explicit expressions for surface potential, center potential, and eventually the subthreshold drain current. The model provides deeper physical insights by successfully incorporating the effect of various design parameters such as doping concentration, gate length, gate work function, and effective oxide thickness on the subthreshold drain current. Moreover, the effect of variations in gate length on the subthreshold slope has also been presented. The model results have been validated with the simulation results obtained from the Silvaco Atlas tool and found reasonably close.

engineering, electrical & electronic,mathematics, interdisciplinary applications
Analytical Subthreshold Current Modeling of Nanoscale Ultra-Thin Body Ultra-Thin Box SOI MOSFETs with a Vertical Gaussian Doping Profile

Sufen Wei,Guohe Zhang,Huixiang Huang,Jing Liu,Zhibiao Shao,Li Geng,Cheng-Fu Yang

DOI: https://doi.org/10.1007/s00542-016-3221-8

2016-01-01

Microsystem Technologies

Abstract:Based on the evanescent-mode analysis, an insightful study of the channel potential is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping. And a two-dimensional (2D) analytical subthreshold current model is presented. The front and the back channel subthreshold currents are effectively derived using the inversion layer current density model which takes the Gaussian doping into account. The accuracy of the model has been verified by 2D numerical device simulations using Sentaurus Technology Computer-Aided Design (TCAD) from Synopsys. The model provides a deep understanding and can be instrumental for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a non-uniform doping profile operating in the subthreshold regime.
A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Ru Huang,Xing Zhang,RuQi Han,YangYuan Wang

DOI: https://doi.org/10.1016/S0038-1101(03)00029-7

IF: 1.916

2003-01-01

Solid-State Electronics

Abstract:An improved physically-based model for deep-submicrometer SOI dynamic threshold-voltage MOSFET (DTMOS) is proposed in this paper, considering the mobile charge determined by both the forward base bias and the gate controlling for quasi-two-dimensional analysis. The alleviated dependence of the surface potential on the channel length and the drain voltage is described, as well as the unique dynamic characteristics of the threshold voltage and threshold-voltage shift for DTMOS. Key physical effects, including velocity saturation effect, mobility degradation effect and channel length modulation effect influenced by the dynamic threshold voltage, are involved in this model. The model is verified by the comparison between the model predictions, numerical results and experimental data of SOI DTMOS devices with various geometries.
Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

M. Suguna,V. A. Nithya sree,R. Kaveri,M. Hemalatha,N. B. Balamurugan,D. Sriramkumar,P. Suveetha Dhanaselvam

DOI: https://doi.org/10.1007/s12633-022-01687-7

IF: 3.4

2022-03-16

Silicon

Abstract:A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor (HJ-TFET). The theoretical analysis is performed to break down the 2D Poisson Equations into two 1D equations. By implementing Finite Differentiation Method and varying work functions, Triple Material Gates are decomposed into three different individual gates with different work functions. These individual 1D Poisson equations that are decomposed are combined by applying sufficient boundary constraints. As a result, this reduces the difficulty of solving 2D Poisson equations. The expressions of surface potential and drain current are made simpler for the proposed analytical model. Finally, the outcomes of the study are correlated with the TCAD simulation. The proposed model is therefore validated to explain the nature of the Triple Material Surrounding Gate Heterojunction TFETs.

materials science, multidisciplinary,chemistry, physical
Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

LI Zun-chao,Yaolin Jiang,Jianmin Wu

2007-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A dual-material-gate single-halo SOI MOSFET was proposed to suppress the short channel effect and increase the current driving capacity of deep submicron SOI MOSFETs. The gate consists of two materials contacting laterally and with different work functions, and halo doping is used in the channel near the source. Using the multi-region parabola potential distribution and the universal boundary conditions, the two-dimensional analytical models of surface potential and threshold voltage for the novel device were derived by solving the two-dimensional Poisson's equation under the fully depleted condition. The characteristics of the novel device were studied as compared with the conventional SOI MOSFET. It was shown that the novel device could suppress threshold voltage roll-off, hot carrier and drain-induced barrier lowering effects efficiently, and increase carrier transport speed through the channel considerably. The analytical models are in very good agreement with two-dimensional device simulator MEDICI.
Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Baili Zhang,Haijun Lou,Dan Li,Xinnan Lin,Mansun Chan

DOI: https://doi.org/10.1109/icsict.2014.7021389

2014-01-01

Abstract:In this paper, a new 2-D analytical potential model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is proposed as the source/drain depletion length taken into account. Then the analytical models for the threshold voltage (Vth), subthreshold slope (SS), and drain-induced barrier lowering (DIBL) are also derived from the potential relationship. The model is verified by the numerical simulation and results show good agreement with the simulations.
Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates

Sufen Wei,Guohe Zhang,Jing Liu,Huixiang Huang,Li Geng,Zhibiao Shao,Cheng-Fu Yang

DOI: https://doi.org/10.1109/ICASI.2017.7988137

2017-01-01

Abstract:The impact of gate voltage differences on the performance of the novel n-type silicon homojunction SOI-Tunnel FET is studied. Based on numerical simulation results using Synopsys Technology Computer-Aided Design (TCAD), the higher on-current and the ultra-low off-current are observed as compared to that of a conventional SOI-Tunnel FET. The analysis of energy band corroborates that gate voltage differences can revamp the potential barrier in the channel region, which can in turn modulate the drain current.

Analytical modeling for the collector current in SOI gate-controlled hybrid transistor

Modeling for the collector current in SOI gate-controlled hybrid transistor

Piecewise model for collector current in SOI gate controlled hybrid transistor

Modeling For The Subthreshold Current In Soi Short Channel Gate Controlled Hybrid Transistor

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Analytical Model for High Current Density Trench Gate Mosfet

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

An analytical subthreshold I-V model of SiC MOSFETs

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Subthreshold current model of fully depleted dual material gate SOI MOSFET

Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region

Analytical Subthreshold Current Modeling of Nanoscale Ultra-Thin Body Ultra-Thin Box SOI MOSFETs with a Vertical Gaussian Doping Profile

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Modeling a Si homojunction SOI-Tunnel FET with configurable voltage difference on gates