Abstract:Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC) turn-on and Zero Current Hard Voltage (ZCHV) turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC) inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

A gate driver based soft-switching SiC bipolar junction transistor

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

A voltage controlled current source gate drive method for IGBT devices

Open-Loop Gate Control for Optimizing the Turn-ON Transition of SiC MOSFETs

Three-Terminal Si/SiC Hybrid Switch

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

IGBT Dynamic Loss Reduction Through Device Level Soft Switching

Low-Loss High-Performance Base-Drive Unit for SiC BJTs

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes

A Cost-efficient Hybrid Gate Driver For SiC MOSFETs and IGBTs.

A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

Source Turn-off (STO) MOSFET: A New Driving Architecture for Smart SiC Module

An Active Gate Driver for Improving Switching Performance of SiC MOSFET

An Advanced Self-Regulating Gate Driver for IGBTs

A Light-Emitting-Diodes-Integrated Silicon Carbide Insulated Gate Bipolar Transistor

High Frequency Switching of Sic High Voltage Ljfet

Development of 6kv SiC Hybrid Power Switch Based on 1200V SiC JFET and MOSFET

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off