Abstract:For compatibility with CMOS technology, the Single-electron transistor (SET) is preferably made in silicon. In this paper, a Si-based SET with in-plane side gates is proposed, which is fabricated in a Silicon-on-insulator (Sol) substrate using Electron beam lithography (EBL) with high-resolution SAL601 negative or ZEP520 positive e-beam resist and high density Inductively coupled plasma (ICP) dry etching. With the structure and the process carefully controlled, the SET with a 70-nm-radius Coulomb island is successfully fabricated. The R(ds)-T characteristics of the SET indicate that the device has typical semiconductor characteristics and the co-tunneling phenomena are impossible to occur. The I(ds) - V(ds) characteristics of the SET at different values of V(g) at 2K all show Coulomb staircases. And the good reproducibility of the I(ds) - V(ds) characteristics can also be realized. The corresponding dI(ds)/dV(ds) - V(ds) characteristics show the clear conductance oscillations at 2K. The I(ds) - V(g) curve at V(ds) = 0.1V and T = 2K approximately exhibits Coulomb oscillations. The total capacitance of the SET is about 3 aF and its operation temperature reaches about 88K. The fabrication process is quite easy and this kind of Si-based SET has the advantages of simplicity, IC-orientation and compatibility with CMOS process.

The Characterization of the Built-in Bipolar Junction Transistor in H-gate PD-SOI NMOS

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Quasi-two-dimensional Subthreshold Current Model of Deep Submicrometer SOI Drive-in Gate Controlled Hybrid Transistors with Lateral Non-Uniform Doping Profile.

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Current Gain and Low-Frequency Noise of Symmetric Lateral Bipolar Junction Transistors on SOI

Analysis of a High-Performance Ultra-Thin Body Ultra-Thin Box Silicon-on-insulator MOSFET with the Lateral Dual-Gates: Featuring the Suppression of the DIBL

Investigation Of The Breakdown Characteristics Of Soi Gate Controlled Hybrid Transistors

Influence of Characteristics’ Measurement Sequence on Total Ionizing Dose Effect in PDSOI Nmosfet

Two-dimensional Analysis of the Interface State Effect on Current Gain for a 4H-Sic Bipolar Junction Transistor

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Modeling for the collector current in SOI gate-controlled hybrid transistor

Design and optimization of a novel SOI LDMOS structure using PIN junction

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

Fabrication and Characteristics of Soi-Based Single-Electron Transistor with In-Plane Side Gates

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

An Improved Large-Signal Equivalent Circuit Model for Partially Depleted Silicon-on-Insulator MOSFET

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate