Abstract:For compatibility with CMOS technology, the Single-electron transistor (SET) is preferably made in silicon. In this paper, a Si-based SET with in-plane side gates is proposed, which is fabricated in a Silicon-on-insulator (Sol) substrate using Electron beam lithography (EBL) with high-resolution SAL601 negative or ZEP520 positive e-beam resist and high density Inductively coupled plasma (ICP) dry etching. With the structure and the process carefully controlled, the SET with a 70-nm-radius Coulomb island is successfully fabricated. The R(ds)-T characteristics of the SET indicate that the device has typical semiconductor characteristics and the co-tunneling phenomena are impossible to occur. The I(ds) - V(ds) characteristics of the SET at different values of V(g) at 2K all show Coulomb staircases. And the good reproducibility of the I(ds) - V(ds) characteristics can also be realized. The corresponding dI(ds)/dV(ds) - V(ds) characteristics show the clear conductance oscillations at 2K. The I(ds) - V(g) curve at V(ds) = 0.1V and T = 2K approximately exhibits Coulomb oscillations. The total capacitance of the SET is about 3 aF and its operation temperature reaches about 88K. The fabrication process is quite easy and this kind of Si-based SET has the advantages of simplicity, IC-orientation and compatibility with CMOS process.

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