Abstract:Abstract:: Silicon Nanowires (SiNWs), a novel category of nanomaterials, exhibit several outstanding properties, including superior transistor performance, quantum tunneling effects, and remarkable electrical and optical capabilities. These properties are expected to contribute significantly to the development of future nanodevices, such as sensors and optoelectronic components. The potential for device miniaturization with SiNWs is based on their ease of monocrystallization. This leads to a reduced rate of hole-electron complexes and their extensive specific surface area that promotes boundary effects, thereby diminishing conductivity. Characterized by unique structural attributes, SiNWs hold promise for a wide range of applications in various sectors. To date, multiple methods have been established for SiNW fabrication, including solgel, electrochemical, laser ablation, chemical vapor deposition, and thermal vapor deposition techniques. Subsequently, the focus has shifted to the application of SiNWs in electronics, energy, and biomedicine. SiNWs are instrumental in producing high-performance electronic devices, such as field-effect transistors, sensors, and memory units. They also exhibit outstanding photovoltaic properties, making them suitable for high-efficiency solar cell and photocatalyst production. Additionally, SiNWs are poised to make significant contributions to biomedicine, particularly in biosensors, drug delivery systems, and tissue engineering materials. This article provides a concise review of the current status of SiNWs in electronics, sensing devices, and solar cell applications, and their roles in high-performance transistors, biosensors, and solar cells. It concludes with an exploration of the challenges and prospects for SiNWs. In summary, the unique attributes of SiNWs establish them as a versatile nanomaterial with broad applicability. This review offers a comprehensive overview of SiNW research and theoretical insights that may guide similar studies. The insights into recent SiNW research presented here are intended to inform future applications and investigations involving these nanomaterials.

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

Classical Coulomb Blockade of A Silicon Nanowire Dot

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

Si Nanowire - Array Source Gated Transistors

Top-gated single-electron transistor in germanium nanowires

Single-Electron Transport Through Semiconducting Nanowires: A Comparison Between Silicon and Germanium

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Single Electron Transistor with Programmable Tunnelling Structure

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Nanoelectronic Devices from Nanowire Heterostructures

Nanotube and Nanowire Transistors

Synthesis and Fabrication of High‐Performance N‐type Silicon Nanowire Transistors

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Room‐Temperature Carbon Nanotube Single‐Electron Transistors with Mechanical Buckling–Defined Quantum Dots

Fabrication of nano-structure and study of Si-based single electron transistor

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Controlled fabrication of single electron transistors from single-walled carbon nanotubes

Application of Silicon Nanowires