Abstract:Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon-based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate-defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group-IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy-hole-light-hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state-of-the-art in semiconductor quantum computing and suggests avenues for future research. Silicon-based spin quantum bits (qubits) have emerged as a promising platform for large-scale quantum computing due to their compatibility with the semiconductor fabrication technology. This review covers the latest developments of spin qubits in various gate-defined semiconducting nanostructures made of silicon and germanium, and highlights strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points.image

Top-gated single-electron transistor in germanium nanowires

Single-Electron Transport Through Semiconducting Nanowires: A Comparison Between Silicon and Germanium

A Single-Electron Transistor and an Even-Odd Effect in Chemically Synthesized Ge Nanowires

Top-gated Germanium Nanowire Quantum Dots in a Few-Electron Regime

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

An N-Type Silicon Nanowire Dot Based Single-Electron Transistor

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

One-dimensional Germanium Nanowires for Future Electronics

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.

Controlled fabrication of single electron transistors from single-walled carbon nanotubes

Fabrication of nano-structure and study of Si-based single electron transistor

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Classical Coulomb Blockade of A Silicon Nanowire Dot

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

A proximitized quantum dot in germanium

Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates