Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Electric field driven quantum phase transition between band insulator and topological insulator

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Topological insulating phase in commonly used semiconductors

Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells

A gate-tunable quantum phase transition in a topological excitonic insulator

Hard superconducting gap in germanium

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Quantized Field-Effect Tunneling Between Topological Edge or Interface States

Quantum Spin Hall States and Topological Phase Transition in Germanene

A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Topological phase transition in a narrow bandgap semiconductor nanolayer

Proximity-induced superconductivity in epitaxial topological insulator/graphene/gallium heterostructures

Superlattice Valley Engineering for Designer Topological Insulators

Polarization-driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well.

Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Reversible engineering of topological insulator surface state conductivity through optical excitation

From Topological Nodal-Line Semimetal to Insulator in ABW-Ge4: A New Member of the Germanium Allotrope

Experimental Progress of Topological Exciton Insulators