Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Polarization-Driven Topological Insulator Transition in Agan/inn/ganquantum Well

Polarization-Driven Topological-Insulator Transition for Piezotronic Field-Effect Transistors with Subthreshold Swing of 5 mV/decade

Topological insulator spin transistor

Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.

Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

Polaritonic Chern insulators in monolayer semiconductors

A gate-tunable quantum phase transition in a topological excitonic insulator

A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Reversible engineering of topological insulator surface state conductivity through optical excitation

Photoinduced Topological Phase Transition and Spin Polarization in A Two-Dimensional Topological Insulator

Engineering Chiral Edge States in Two-Dimensional Topological Insulator/ferromagnetic Insulator Heterostructures

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Theoretical Progress of Polarized Interfaces in Semiconductors

Programmable Polariton Topological Insulators All-Optically Controlled by the Stark Effect.

Polarization-Driven Edge-State Transport in Transition-Metal Dichalcogenides

Novel Topological Insulators with Hybrid-order Boundary States

Tunable polarization in beam-splitter based on 2D topological insulators

Optical switching of topological phase in a perovskite polariton lattice

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)