Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon GaN contacting with alpha-In2Se3, the structural stability demonstrates a direct dependence on the polarity assembly, as evidenced by the change of binding energy from -1.39/-1.83 eV in Ga-polarity to -2.99/-1.95 eV in N-polarity. In particular, the polarity inversion of GaN not only dictates the direction of charge transfer but also increases the electrostatic potential differences from 2.92/1.84 eV in N-polarity to 3.65/5.10 eV in Ga-polarity. Moreover, the interfacial polarization and electronic band profiles of alpha-In2Se3/GaN have been further adjusted by applying the external electric field. It is found that the interfacial dipole interaction plays a crucial role in the external electric field modulation, with a direct correlation to the charge distribution at alpha-In2Se3/GaN polar heterointerfaces. By sweeping the external electric field from -0.4 to 0.4 V/& Aring;, the alpha-In2Se3(up arrow)/GaN(up arrow) and alpha-In2Se3(down arrow)/GaN(up arrow) polar heterostructures maintain the type-III electronic band profiles, attributed to the electrostatic shielding effect of high-density charge carriers. However, the band alignments of alpha-In2Se3(up arrow)/GaN(down arrow) and alpha-In2Se3(down arrow)/GaN(down arrow) polar heterostructures have been extensively transformed from type-III, to type-II, and then to type-I. Our findings demonstrate the effective capability of polarity inversion and external electric field on manipulating dipole interactions of 2D/3D polar heterostructures, paving the way for the innovative design and optimization of next-generation optoelectronics, information memory, and neural computing applications.

Theoretical Progress of Polarized Interfaces in Semiconductors

Manipulating topological transformations of polar structures through real-time observation of the dynamic polarization evolution

Polaritonic Chern insulators in monolayer semiconductors

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization.

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Rethinking Polarization in Wurtzite Semiconductors

High-efficiency in situ amplitude and phase control of infrared light using topological polaritons

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Leveraging both faces of polar semiconductor wafers for functional devices

Polarization-controlled Ohmic to Schottky Transition at a Metal/ferroelectric Interface

Polarization at the Nanoscale

Polarization-Driven Topological Insulator Transition in Agan/inn/ganquantum Well

Topological insulating phase in commonly used semiconductors

Using both faces of polar semiconductor wafers for functional devices