Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon GaN contacting with alpha-In2Se3, the structural stability demonstrates a direct dependence on the polarity assembly, as evidenced by the change of binding energy from -1.39/-1.83 eV in Ga-polarity to -2.99/-1.95 eV in N-polarity. In particular, the polarity inversion of GaN not only dictates the direction of charge transfer but also increases the electrostatic potential differences from 2.92/1.84 eV in N-polarity to 3.65/5.10 eV in Ga-polarity. Moreover, the interfacial polarization and electronic band profiles of alpha-In2Se3/GaN have been further adjusted by applying the external electric field. It is found that the interfacial dipole interaction plays a crucial role in the external electric field modulation, with a direct correlation to the charge distribution at alpha-In2Se3/GaN polar heterointerfaces. By sweeping the external electric field from -0.4 to 0.4 V/& Aring;, the alpha-In2Se3(up arrow)/GaN(up arrow) and alpha-In2Se3(down arrow)/GaN(up arrow) polar heterostructures maintain the type-III electronic band profiles, attributed to the electrostatic shielding effect of high-density charge carriers. However, the band alignments of alpha-In2Se3(up arrow)/GaN(down arrow) and alpha-In2Se3(down arrow)/GaN(down arrow) polar heterostructures have been extensively transformed from type-III, to type-II, and then to type-I. Our findings demonstrate the effective capability of polarity inversion and external electric field on manipulating dipole interactions of 2D/3D polar heterostructures, paving the way for the innovative design and optimization of next-generation optoelectronics, information memory, and neural computing applications.

Rethinking Polarization in Wurtzite Semiconductors

Rethinking polarization in wurtzite semiconductors

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Polarization at the Nanoscale

Polarity Reversal and Strain Modulation of Janus MoSSe/GaN Polar Semiconductor Heterostructures.

Clarification of the spontaneous polarization direction in crystals with wurtzite structure

Theoretical Progress of Polarized Interfaces in Semiconductors

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering

Spontaneous Luminescence Polarizations of Wurtzite Ingan/Gan Quantum Wells

Polarity reversal and strain modulation of Janus MoSSe/GaN polar semiconductor heterostructures

Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations

Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

Stability and Electronic Properties of GaN Phases with Inversion Symmetry to Inherently Inhibit Polarization

Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits

A Thermodynamic Model And Estimation Of The Experimental Value Of Spontaneous Polarization In A Wurtzite Gan

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Polarization Due to Emergent Polarity in Elemental Semiconductor Thinfilms under Bending.

Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies

Core Polarization In Semiconductors - Effects On Quasi-Particle Energies

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells