Spontaneous Luminescence Polarizations of Wurtzite Ingan/Gan Quantum Wells

Chuanyu Jia,Tongjun Yu,Renchun Tao,Xiaodong Hu,Zhijian Yang,Zhixin Qin,Zhizhong Chen,Guoyi Zhang
DOI: https://doi.org/10.1063/1.2999540
IF: 4
2008-01-01
Applied Physics Letters
Abstract:In this paper, we analyze the polarization selection rules of wurtzite InGaN∕GaN quantum wells using the k⋅p perturbation method. It was found that the symmetry properties of the valence subbands’ wavefunctions at kt≠0 are quite different with those at kt=0. These symmetry properties of valence subbands’ wavefunctions influence the momentum matrix element for TE and TM modes, leading to a different polarization selection rules from the ones at kt=0 and the absence of spectra peak shift between TE and TM modes. It is suggested that the polarization selection rule at kt≠0 should be considered in the main transition process for wurtzite III-V semiconductors.
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