Abstract:The electronic structure of semiconductors and insulators is affected by ionic motion through electron-phonon interaction, yielding temperature-dependent band gap energies and zero-point renormalization (ZPR) at absolute zero temperature. For polar materials, the most significant contribution to the band gap ZPR can be understood in terms of the Fröhlich model, which focuses on the nonadiabatic interaction between an electron and the macroscopic electrical polarization created by a long-wavelength optical longitudinal phonon mode. On the other hand, spin-orbit interaction (SOC) modifies the bare electronic structure, which will, in turn, affect the electron-phonon interaction and the ZPR. We present a comparative investigation of the effect of SOC on the band gap ZPR of twenty semiconductors and insulators with cubic symmetry using first-principles calculations. We observe a SOC-induced decrease of the ZPR, up to 30%, driven by the valence band edge, which almost entirely originates from the modification of the bare electronic eigenenergies and the decrease of the hole effective masses near the $\Gamma$ point. We also incorporate SOC into a generalized Fröhlich model, addressing the Dresselhaus splitting which occurs in noncentrosymmetric materials, and confirm that the predominance of nonadiabatic effects on the band gap ZPR of polar materials is unchanged when including SOC. Our generalized Fröhlich model with SOC provides a reliable estimate of the SOC-induced decrease of the polaron formation energy obtained from first principles and brings to light some fundamental subtleties in the numerical evaluation of the effective masses with SOC for noncentrosymmetric materials. We finally warn about a possible breakdown of the parabolic approximation within the physically relevant energy range of the Fröhlich interaction for materials with high phonon frequencies treated with SOC.

Core Polarization In Semiconductors - Effects On Quasi-Particle Energies

Core Polarization In Solids: Formulation And Application To Semiconductors

Polaronic Effect on the Binding Energy of an Impurity with Varying Position in Parabolic Quantum Dots

Second-order Perturbative Treatment for Confined Polarons in Low-Dimensional Polar Semiconductors

An Effective Approach for Two-Dimensional Polarons in an Asymmetric Quantum Dot

Electronic Polarization Effects in Core-Level Spectroscopy

Influence Of The Core-Valence Interaction And Of The Pseudopotential Approximation On The Electron Self-Energy In Semiconductors

Rethinking Polarization in Wurtzite Semiconductors

Scaling Universality Between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors

Polarization at the Nanoscale

Influence of Polarization-Induced Electric Field on Subband Structure and Electron Distribution in Al/sub X/ga/sub 1-X/n/gan Double Quantum Wells

Influence Of Polarization-Induced Electric Field On Subband Structure In A1(Chi)Ga(1-Chi)N/Gan Double Quantum Wells

Effect of spin-orbit coupling on the zero-point renormalization of the electronic band gap in cubic materials: First-principles calculations and generalized Fröhlich model

Combining the $Δ$-Self-Consistent-Field and GW Methods for Predicting Core Electron Binding Energies in Periodic Solids

Effects of self-consistent extended Hubbard interactions and spin-orbit couplings on energy bands of semiconductors and topological insulators

Significant suppression of phonon transport in polar semiconductors owing to electron-phonon-induced dipole coupling: An effect of breaking centrosymmetry

Efficient and Accurate Estimation of Electronic Polarization Energies for Organic Semiconductors: An Embedding Charge Quantum Mechanics/Continuum Dielectric Model

Polarized Wannier functions: ab-initio study of the dielectric properties of silicon and gallium arsenide

Electron Correlation in Conjugated Polymers

All-electron exact exchange treatment of semiconductors: effect of core-valence interaction on band-gap and d-band position