Topological insulating phase in commonly used semiconductors

kai chang

DOI: https://doi.org/10.1093/nsr/nwt030

IF: 20.6

2014-01-01

National Science Review

Abstract:Interface polarization between commonly used semiconductors provides a possible method to drive commonly used semiconductors into their topological insulating phase.

What problem does this paper attempt to address?

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.

Dong Zhang,Wenkai Lou,Maosheng Miao,Shou-cheng Zhang,Kai Chang

DOI: https://doi.org/10.1103/physrevlett.111.156402

IF: 8.6

2013-01-01

Physical Review Letters

Abstract:We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to a topological insulator transition. Our work provides a new method to realize topological insulators in commonly used semiconductors and suggests a promising approach to integrate it in well-developed semiconductor electronic devices.
Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

L Andrew Wray,Suyang Xu,Madhab Neupane,David Hsieh,Dong Qian,Alexei V Fedorov,Hsin Lin,Susmita Basak,Arun Bansil,Yew San Hor,Robert J Cava,M Zahid Hasan

2011-01-01

Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering [1–6]. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering [3–22]. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO2) and control of bulk doping in TI Bi2Se3 from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological …
Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

L. Andrew Wray,Suyang Xu,Madhab Neupane,Yuqi Xia,David Hsieh,Dong Qian,Alexei V. Fedorov,Hsin Lin,Susmita Basak,Yew San Hor,Robert J. Cava,Arun Bansil,M. Zahid Hasan

DOI: https://doi.org/10.48550/arXiv.1105.4794

2011-05-24

Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons,Superconductivity
Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Chong Su Kong,Liu Lizhe,Sparks Taylor D.,Liu Feng,Deshpande Vikram V.

DOI: https://doi.org/10.48550/arxiv.2004.04870

2020-01-01

Abstract: As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped surface state. Analytical formulation suggests that the hybridization gap scales exponentially with decrease in number of layers while the system oscillates between topologically trivial and non-trivial insulators. This work explores the transport properties of a 3D TI in the inter-surface hybridization regime. By experimentally probing the hybridization gap as a function of BiSbTeSe2 thickness using three different methods, we map the crossover from the 3D to 2D state. In the 2D topological state, we observe a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating a quantum spin Hall (QSH) state. Additionally, we study the response of trivial and non-trivial hybridization gapped states modulated by external out-of-plane magnetic and electric fields. Our revelations of surface gap-closing and/or reopening features are strongly indicative of topological phase transitions (TPTs) in the hybridization gap regime, realizing magnetic/electric field switching between band insulating and QSH states with immense potential for practical applications.
Polaritonic Chern insulators in monolayer semiconductors

Li He,Jingda Wu,Jicheng Jin,Eugene J. Mele,Bo Zhen

DOI: https://doi.org/10.1103/PhysRevLett.130.043801

2022-06-17

Abstract:Systems with strong light-matter interaction opens up new avenues for studying topological phases of matter. Examples include exciton-polaritons, mixed light-matter quasiparticles, where the topology of the polaritonic band structure arises from the collective coupling between matter wave and optical fields strongly confined in periodic dielectric structures. Distinct from light-matter interaction in a uniform environment, the spatially varying nature of the optical fields leads to a fundamental modification of the well-known optical selection rules, which were derived under the plane wave approximation. Here we identify polaritonic Chern insulators by coupling valley excitons in transition metal dichalcogenides (TMDs) to photonic Bloch modes in a dielectric photonic crystal (PhC) slab. We show that polaritonic Dirac points (DPs), which are markers for topological phase transition points, can be constructed from the collective coupling between valley excitons and photonic Dirac cones in the presence of both time-reversal and inversion symmetries. Lifting exciton valley degeneracy by breaking time-reversal symmetry leads to gapped polaritonic bands with non-zero Chern numbers. Through numerical simulations, we predict polaritonic chiral edge states residing inside the topological gaps. Our work paves the way to further explore polaritonic topological phases and their practical applications in polaritonic devices.

Optics,Mesoscale and Nanoscale Physics
Theoretical Progress of Polarized Interfaces in Semiconductors

Zhang Dong,Lou Wen-Kai,Chang Kai

DOI: https://doi.org/10.7498/aps.68.20191239

IF: 0.906

2019-01-01

Acta Physica Sinica

Abstract:The manipulation of electronic structures of conventional semiconductors remains the key issue of modern semiconductor physics and devices. Compare to limited modulation of semiconductors by conventional gate technique, we theoretically demonstrate that, polarized interfaces can generate a strong built-in electric field (about 10 MV/cm) in both polar and non-polar semiconductors, and the polarized interfaces can tune the band gaps in a wide range (approximately 0—2 eV), and significantly enhances the Rashba spin-orbit coupling strength as well. In this paper, we introduce polarized interfaces in polar semiconductor InN and non-polar semiconductor Ge, and generate topological insulator phases by polarized interfaces. The polarized interface is compatible with conventional semiconductor fabrication techniques and shows interesting physics and potential optoelectronic applications.
Manipulating Topological Phase Transition by Strain.

Junwei Liu,Yong Xu,Jian Wu,Bing-Lin Gu,S. B. Zhang,Wenhui Duan

DOI: https://doi.org/10.1107/s2053229613032336

2014-01-01

Acta Crystallographica Section C Structural Chemistry

Abstract:First-principles calculations show that strain-induced topological phase transition is a universal phenomenon in those narrow-gap semiconductors for which the valence band maximum (VBM) and conduction band minimum (CBM) have different parities. The transition originates from the opposite responses of the VBM and CBM, whose magnitudes depend critically on the direction of the applied strain. Our work suggests that strain can play a unique role in tuning the electronic properties of topological insulators for device applications, as well as in the achievement of new topological insulators.
Topological phase transition in Dirac fermionic heterostructures

Jeongwoo Kim,Jinwoong Kim,Ki-Seok Kim,Seung-Hoon Jhi

DOI: https://doi.org/10.48550/arXiv.1206.2953

2012-06-13

Materials Science

Abstract:Materials with non-trivial topology in their electronic structures enforce the existence of helical Dirac fermionic surface states. We discovered emergent topological phases in the stacked structures of topological insulator and band insulator layers where the surface Dirac fermions interact to each other with particular helicity ordering. Using first-principles calculations and a model Lagrangian, we explicitly demonstrated that such helicity ordering occurs in real materials of ternary chalcogen compounds and determines their topological insulating phase. Our results reveal the rich collective nature of interacting surface Dirac fermions, and pave the way for utilizing topological phases for technological devices such as non-volatile memories.
Phase-induced topological superconductivity in a planar heterostructure

Omri Lesser,Andrew Saydjari,Marie Wesson,Amir Yacoby,Yuval Oreg

DOI: https://doi.org/10.1073/pnas.2107377118

2021-07-06

Abstract:Topological superconductivity in quasi-one-dimensional systems is a novel phase of matter with possible implications for quantum computation. Despite years of effort, a definitive signature of this phase in experiments is still debated. A major cause of this ambiguity is the side effects of applying a magnetic field: induced in-gap states, vortices, and alignment issues. Here we propose a planar semiconductor-superconductor heterostructure as a platform for realizing topological superconductivity without applying a magnetic field to the two-dimensional electron gas hosting the topological state. Time-reversal symmetry is broken only by phase biasing the proximitizing superconductors, which can be achieved using extremely small fluxes or bias currents far from the quasi-one-dimensional channel. Our platform is based on interference between this phase biasing and the phase arising from strong spin-orbit coupling in closed electron trajectories. The principle is demonstrated analytically using a simple model, and then shown numerically for realistic devices. We show a robust topological phase diagram, as well as explicit wavefunctions of Majorana zero modes. We discuss experimental issues regarding the practical implementation of our proposal, establishing it as an accessible scheme with contemporary experimental techniques.
Topological phase transitions in bulk

Stanislav Chadov,Janos Kiss,Jürgen Kübler,Claudia Felser

DOI: https://doi.org/10.48550/arXiv.1209.6249

2012-09-27

Materials Science

Abstract:We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such as crystal field and spin-orbit coupling). In both cases the system exhibits a Dirac cone, which is the universal manifestation of topological phase transition, independently on the type of driving parameters. In particular, this leads to a simple way of determining the topological class based solely on the bulk information even for the systems with translational symmetry broken by atomic disorder or by strong electron correlations. Here we demonstrate this on example of the zinc-blende related semiconductors by means of the {\it ab-initio} fully-relativistic band structure calculations involving the coherent potential approximation (CPA) technique.
Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

D. Q. Fang,D. W. Wang

2024-06-13

Abstract:Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications. Here, using first-principles calculations, we investigate electric-field-modulated topological phase transition in a vdW heterobilayer formed by vertically stacking 2D AlSb and InSe monolayers. The AlSb/InSe heterobilayer studied possesses both dynamical and thermal stabilities, which is a direct bandgap semiconductor and forms a Z-scheme heterojunction. With inclusion of spin-orbit coupling (SOC) and applying external electric field, the bandgap decreases at first and then increase, and a trivial insulator to topological insulator phase transition is observed. For the topological insulator phase, band inversion is ascribed to the strong SOC of p orbitals of Sb. Our work paves the way for the design and application of multifunctional nanoscale devices such as topological field effect transistor.

Materials Science,Computational Physics
Engineering artificial topological phases via superlattices

Pavel P. Shibayev,Elio J. König,Maryam Salehi,Jisoo Moon,Myung-Geun Han,Seongshik Oh

DOI: https://doi.org/10.1021/acs.nanolett.8b03751

2018-09-18

Abstract:The search for new topological materials and states of matter is presently at the forefront of quantum materials research. One powerful approach to novel topological phases beyond the thermodynamic space is to combine different topological/functional materials into a single materials platform in the form of superlattices. However, despite some previous efforts, there has been a significant gap between theories and experiments in this direction. Here, we provide the first detailed set of experimentally-verifiable phase diagrams of topological superlattices composed of archetypal topological insulator (TI), Bi$_{2}$Se$_{3}$, and normal insulator (NI), In$_{2}$Se$_{3}$, by combining molecular-level materials control, low-temperature magnetotransport measurements, and field theoretical calculations. We show how the electronic properties of topological superlattices evolve with unit-layer thicknesses and utilize the weak antilocalization effect as a tool to gain quantitative insights into the evolution of conducting channels within each set of heterostructures. This orchestrated study opens the door to the possibility of creating a variety of artificial-topological-phases by combining topological materials with various other functional building blocks such as superconductors and magnetic materials.

Mesoscale and Nanoscale Physics
Electronic properties of SnTe-class topological crystalline insulator materials*

Jianfeng Wang,Na Wang,Huaqing Huang,Wenhui Duan

DOI: https://doi.org/10.1088/1674-1056/25/11/117313

2016-01-01

Chinese Physics B

Abstract:The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations, and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.
Manipulating Topological Phases in Magnetic Topological Insulators

Gang Qiu,Hung-Yu Yang,Su Kong Chong,Yang Cheng,Lixuan Tai,Kang L. Wang

DOI: https://doi.org/10.3390/nano13192655

IF: 5.3

2023-09-27

Nanomaterials

Abstract:Magnetic topological insulators (MTIs) are a group of materials that feature topological band structures with concurrent magnetism, which can offer new opportunities for technological advancements in various applications, such as spintronics and quantum computing. The combination of topology and magnetism introduces a rich spectrum of topological phases in MTIs, which can be controllably manipulated by tuning material parameters such as doping profiles, interfacial proximity effect, or external conditions such as pressure and electric field. In this paper, we first review the mainstream MTI material platforms where the quantum anomalous Hall effect can be achieved, along with other exotic topological phases in MTIs. We then focus on highlighting recent developments in modulating topological properties in MTI with finite-size limit, pressure, electric field, and magnetic proximity effect. The manipulation of topological phases in MTIs provides an exciting avenue for advancing both fundamental research and practical applications. As this field continues to develop, further investigations into the interplay between topology and magnetism in MTIs will undoubtedly pave the way for innovative breakthroughs in the fundamental understanding of topological physics as well as practical applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Superlattice Valley Engineering for Designer Topological Insulators

Xiao Li,Fan Zhang,Qian Niu,Ji Feng

DOI: https://doi.org/10.1038/srep06397

IF: 4.6

2014-01-01

Scientific Reports

Abstract:A topological insulator is a novel state of quantum matter, characterized by symmetry-protected Dirac interfacial states within its bulk gap. Tremendous effort has been invested into the search for topological insulators. To date, the discovery of topological insulators has been largely limited to natural crystalline solids. Therefore, it is highly desirable to tailor-make various topological states of matter by design, starting with but a few accessible materials or elements. Here, we establish that valley-dependent dimerization of Dirac surface states can be exploited to induce topological quantum phase transitions, in a binary superlattice bearing symmetry-unrelated interfacial Dirac states. This mechanism leads to a rich phase diagram and allows for rational design of strong topological insulators, weak topological insulators, and topological crystalline insulators. Our ab initio simulations further demonstrate this mechanism in [111] and [110] superlattices of calcium and tin tellurides. While our results reveal a remarkable phase diagram for the binary superlattice, the mechanism is a general route to design various topological states.
Converting normal insulators into topological insulators via tuning orbital levels

Wu-Jun Shi,Junwei Liu,Yong Xu,Shi-Jie Xiong,Jian Wu,Wenhui Duan

DOI: https://doi.org/10.1103/physrevb.92.205118

IF: 3.7

2015-11-17

Physical Review B

Abstract:Tuning the spin-orbit coupling strength via foreign element doping and modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy to realize topological phase transition by tuning the orbital level. Following this strategy, our first-principles calculations demonstrate that a topological phase transition in the cubic perovskite-type compounds CsGeBr3 and CsSnBr3 could be facilitated by carbon substitutional doping. Such a unique topological phase transition predominantly results from the lower orbital energy of the carbon dopant, which can pull down the conduction bands and even induce band inversion. Beyond conventional approaches, our finding of tuning the orbital level may greatly expand the range of topologically nontrivial materials.

physics, condensed matter, applied,materials science, multidisciplinary
Topological Dirac semimetal phases in InSb/$\alpha$-Sn semiconductor superlattices

Jian-Peng Sun,Jia-ji Zhu,Dong Zhang,Kai Chang

2016-01-01

Abstract: We demonstrate theoretically the coexistence of Dirac semimetal and topological insulator phases in InSb/$\alpha$-Sn conventional semiconductor superlattices, based on advanced first-principles calculations combined with low-energy $k\cdot p$ theory. By proper interfaces designing, a large interface polarization emerges when the growth direction is chosen along {[}111{]}. Such an intrinsic polarized electrostatic field reduces band gap largely and invert the band structure finally, leading to emerge of the topological Dirac semimetal phase with a pair of Dirac nodes appearing along the (111) crystallographic direction near the $\Gamma$ point. The surface states and Fermi arc are clearly observed in (100) projected surface. In addition, we also find a two-dimensional topological insulator phase with large nontrivial band gap approaching 70 meV, which make it possible to observe the quantum spin Hall effect at room temperature. Our proposal paves a way to realize topological nontrivial phases coexisted in conventional semiconductor superlattices by proper interface designing.
Topological phase transition in a narrow bandgap semiconductor nanolayer

Zhi-Hai Liu,Wenkai Lou,Kai Chang,H. Q. Xu

2023-10-26

Abstract:Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development towards topological quantum computing. Here we demonstrate that a topological phase transition can be achieved in a narrow bandgap semiconductor nanolayer under application of a perpendicular electric field. Based on full band structure calculations, it is shown that the topological phase transition occurs at an electric-field induced band inversion and is accompanied by a sharp change of the $\mathbb{Z}_{2}$ invariant at the critical field. We also demonstrate that the nontrivial topological phase is manifested by the quantum spin Hall edge states in a band-inverted nanolayer Hall-bar structure. We present the phase diagram of the nanolayer in the space of layer thickness and electric field strength, and discuss the optimal conditions to achieve a large topological bandgap in the electric-field induced topological phase of a semiconductor nanolayer.

Mesoscale and Nanoscale Physics
Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Yong Wang,Faxian Xiu,Lina Cheng,Liang He,Murong Lang,Jianshi Tang,Xufeng Kou,Xinxin Yu,Xiaowei Jiang,Zhigang Chen,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1021/nl202920p

IF: 10.8

2012-01-01

Nano Letters

Abstract:Exploring exciting and exotic physics, scientists are pursuing practical device applications for topological insulators. The Dirac-like surface states in topological insulators are protected by the time-reversal symmetry, which naturally forbids backscattering events during the carrier transport process, and therefore offers promising applications in dissipationless spintronic devices. Although considerable efforts have been devoted to controlling their surface conduction, limited work has been focused on tuning surface states and bulk carriers in Bi2Te3 nanostructures by external field. Here we report gate-tunable surface conduction in Na-doped Bi2Te3 topological insulator nanoplates. Significantly, by applying external gate voltages, such topological insulators can be tuned from p-type to n-type. Our results render a promise in finding novel topological insulators with enhanced surface states.
Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

helin cao,chang liu,jifa tian,yang xu,i miotkowski,m zahid hasan,yong p chen

2014-01-01

Abstract: Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major challenge with realistic TI materials is to access, distinguish and manipulate the electronic transport of TSS often obscured by other possible parallel conduction channels that include the bulk as well as a two-dimensional electron gas (2DEG) formed near the surface due to bending of the bulk bands. Such a (Schrodinger-fermion) 2DEG represents topologically-trivial surface states, whose coexistence with the TSS has been revealed by angle resolved photoemission spectroscopy. Here we show that simple manipulations of surface conditions can be used to access and control both types of surface states and their coexistence in bulk-insulating Bi2Te2Se, whose surface conduction is prominently manifested in temperature dependent resistance and nonlocal transport. The trivial 2DEG and TSS can both exhibit clear Shubnikov-de Haas oscillations in magnetoresistance, with different Berry phases ~0 and ~pi that distinguish their different topological characters. We also report a deviation from the typical weak antilocalization behavior, possibly due to high mobility TSS. Our study enables distinguishing, controlling and harnessing electronic transport of TI surface carriers with different topological natures.

Topological insulating phase in commonly used semiconductors

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Polaritonic Chern insulators in monolayer semiconductors

Theoretical Progress of Polarized Interfaces in Semiconductors

Manipulating Topological Phase Transition by Strain.

Topological phase transition in Dirac fermionic heterostructures

Phase-induced topological superconductivity in a planar heterostructure

Topological phase transitions in bulk

Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

Engineering artificial topological phases via superlattices

Electronic properties of SnTe-class topological crystalline insulator materials*

Manipulating Topological Phases in Magnetic Topological Insulators

Superlattice Valley Engineering for Designer Topological Insulators

Converting normal insulators into topological insulators via tuning orbital levels

Topological Dirac semimetal phases in InSb/$\alpha$-Sn semiconductor superlattices

Topological phase transition in a narrow bandgap semiconductor nanolayer

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator