Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Manipulating Surface-Related Ferromagnetism in Modulation-Doped Topological Insulators.

One-way Transmission of Electrons on the Topological Insulator Surface Modulated by Magnetic Potential

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Emergent helical edge states in a hybridized three-dimensional topological insulator

Magnetic topological insulators: growth, structure, and properties

Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Reversible engineering of topological insulator surface state conductivity through optical excitation

Magnetically Confined States and Transport Property on the Surface of a Topological Insulator

Surface Edge State and Half-Quantized Hall Conductance in Topological Insulators

Inducing Quantum Phase Transitions in Non-Topological Insulators Via Atomic Control of Sub-Structural Elements

Robust topological interface states in a lateral magnetic-topological heterostructure

Spin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers

Two Types Of Surface States In Topological Crystalline Insulators

Electron-Phonon Coupling on the Surface of Topological Insulators

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Direct observation of quantum confinement of massless Dirac fermions in a topological insulator

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices