Abstract:We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2Se3 is shifted towards the Dirac point with this method. Using THz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (~ 50 meV above the Dirac point and 170 meV below the conduction band minimum) and it is stabilized in the intrinsic regime while enhancing electron mobility. This represents the first use of a charged polymer gate for modulating TI charge density. The mobility of surface state electrons is enhanced to a value as high as ~1600 cm^2/Vs at 5K.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to use electret polymers charged by corona, through a novel method - non - volatile electrostatic gating, to reduce the carrier concentration in Bi₂Se₃ thin films of topological insulators (TI), thereby shifting the Fermi level towards the Dirac point and reducing the surface chemical potential into the bulk bandgap. This method can achieve significant electron density depletion without discontinuously connecting gate electrodes or chemically modifying the TI. Specifically, this research aims to: 1. **Reduce carrier concentration**: Through the non - volatile electrostatic gating technique, reduce the carrier concentration in Bi₂Se₃ thin films, making the material closer to the intrinsic regime, that is, the bulk insulating state. 2. **Adjust the Fermi level**: Shift the Fermi level towards the Dirac point, so that the surface chemical potential is reduced into the bulk bandgap and stabilized in the intrinsic regime. 3. **Increase electron mobility**: Through the above - mentioned method, enhance the mobility of surface - state electrons, which can be up to approximately 1600 cm²/Vs (at a temperature of 5K). ### Background problems Most grown Bi₂Se₃ materials have their chemical potential in the conduction band due to defect doping or surface band - bending effects, resulting in their bulk properties not being insulating. This limits the full play of the unique properties of topological insulators. Therefore, researchers need to find a method that can effectively regulate the electronic characteristics of these materials, making them enter the intrinsic regime, so as to better study and apply their topological surface states. ### Solutions This paper proposes a new method, that is, using the non - volatile electrostatic gating technique to realize the regulation of the carrier concentration in Bi₂Se₃ thin films by corona - charging electret polymers. This method can apply sufficient electric fields to significantly reduce the electron density and shift the Fermi level towards the Dirac point without relying on continuously connecting gate electrodes or chemical modification. Experimental results show that this method not only effectively reduces the surface chemical potential but also increases the electron mobility. ### Experimental verification Researchers carried out detailed experimental verification by means of terahertz (THz) spectroscopy, etc., proving the effectiveness of this method. The results show that the negatively - charged polymer layer can significantly reduce the carrier density of the Bi₂Se₃ surface state, while the positively - charged polymer layer has a relatively small impact on it. In addition, by adjusting the charging voltage, the chemical potential can be further finely regulated to be close to the Dirac point. ### Conclusions This research first demonstrates the ability to use charged polymer gates to modulate the carrier concentration of topological insulators, providing new possibilities for future low - dissipation spintronics and other applications based on topological insulators.

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