Octreotide LAR in carcinoid: how to dose?

James C. Yao,L. Kvols

DOI: https://doi.org/10.1097/MPA.0b013e31818adf4b

2008-10-01

Pancreas

Abstract:

What problem does this paper attempt to address?

Enhancement of spin-to-charge conversion efficiency in topological insulators by interface engineering

Haoran He,Lixuan Tai,Di Wu,Hao Wu,Armin Razavi,Kin Wong,Yuxiang Liu,Kang L. Wang

DOI: https://doi.org/10.1063/5.0049044

IF: 6.6351

2021-07-01

APL Materials

Abstract:Topological insulator (TI) based heterostructure is a prospective candidate for ultrahigh spin-to-charge conversion efficiency due to its unique surface states. We investigate the spin-to-charge conversion in (Bi,Sb)2Te3 (BST)/CoFeB, BST/Ru/CoFeB, and BST/Ti/CoFeB by spin pumping measurement. We find that the inverse Edelstein effect length (λIEE) increases by 60% with a Ru insertion while remains constant with a Ti insertion. This can be potentially explained by the protection of BST surface states due to the high electronegativity of Ru. Such enhancement is independent of the insertion layer thickness once the thickness of Ru is larger than 0.5 nm, and this result suggests that λIEE is very sensitive to the TI interface. In addition, an effectively perpendicular magnetic anisotropy field and additional magnetic damping are observed in the BST/CoFeB sample, which comes from the interfacial spin–orbit coupling between the BST and the CoFeB. Our work provides a method to enhance λIEE and is useful for the understanding of charge-to-spin conversion in TI-based systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Spin-to-Charge Conversion Manipulated by Fine-Tuning the Fermi Level of Topological Insulator (Bi 1– x Sb x ) 2 Te 3

Shu Hsuan Su,Pei-Yu Chuang,Jung-Chuan Lee,Cheong-Wei Chong,Ya Wen Li,Zong Mou Lin,Yi-Chun Chen,Cheng-Maw Cheng,Jung-Chun-Andrew Huang

DOI: https://doi.org/10.1021/acsaelm.1c00182

IF: 4.494

2021-07-06

ACS Applied Electronic Materials

Abstract:The efficiency of spin-to-charge conversion is a key parameter in determining the performance of emerging spintronic devices. In the topological surface state of a topological insulator (TI), the spin-momentum locking effect offers a great possibility for efficient spin-to-charge conversion. Here, we report the relation between the Fermi level position EF and spin-to-charge conversion efficiency in heterostructure Ni80Fe20 (Py)/(Bi1–xSbx)2Te3. The band structure of (Bi1–xSbx)2Te3 films becomes tailored by tuning the ratio of bismuth to antimony so that the position of the Fermi level EF varies from the top side of the valence band to the bottom side of the conduction band through the in-gap surface Dirac cone. The result is consistent with the electronic behavior of the majority carriers varying from n-type to p-type. In spin-pumping measurements, we observed that the inverse Edelstein effect length (λIEE) with a tuned EF near the Dirac point is significantly enhanced, indicating that the spin-charge conversion is determined mainly by the topological surface state. These results demonstrate that fine-tuning of EF in a TI-based heterostructure is critical to maximizing the efficiency of spin-to-charge conversion using a spin-momentum locking mechanism.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00182?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00182</a>.Determination of the x value in (Bi1–xSbx)2Te3, the carrier concentration of the surface state, dependence of the FMR resonance frequency, the relation between the peak-to-peak linewidth of FMR spectra and the microwave frequency, the spin-current density and charge density, large-area surface morphology of (Bi1–xSbx)2Te3 films, numerical fitting procedure for analysis of the measured voltage, control experiment of Py/MgO/(Bi0.3Sb0.7)2Te3, sign of spin-to-charge conversion in topological insulator (Bi1–xSbx)2Te3, control experiment of Py/Cu/(Bi0.3Sb0.7)2Te3, and ARPES and XPS of the Py/(Bi0.22Sb0.78)2Te3 crystal (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00182/suppl_file/el1c00182_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
[Effect of a calcium antagonist, nifedipine, on the cold pressor test in normal subjects].

V. Nicita-Mauro,N. Barbera,M. Buemi,A. Lasco,N. Frisina

1978-10-30

Abstract:
Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

E. Longo,L. Locatelli,P. Tsipas,A. Lintzeris,A. Dimoulas,M. Fanciulli,M. Longo,R. Mantovan

DOI: https://doi.org/10.1021/acsami.3c08830

2023-04-21

Abstract:Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. In order to exploit such ideal topologically-protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and spin-charge conversion (SCC) is probed by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature, which is interpreted within the inverse Edelstein effect (IEE), thus resulting in a conversion efficiency lambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Materials Science,Other Condensed Matter
Highly efficient charge-to-spin conversion from in situ Bi 2 Se 3 /Fe heterostructures

Dapeng Zhu,Yi Wang,Shuyuan Shi,Kie-Leong Teo,Yihong Wu,Hyunsoo Yang

DOI: https://doi.org/10.1063/5.0035768

IF: 4

2021-02-08

Applied Physics Letters

Abstract:Topological insulators (TIs) show bright prospects in exerting spin–orbit torques (SOTs) and inducing magnetization switching in the adjacent ferromagnetic (FM) layer. However, a variation of the SOT efficiency values may be attributed to the ex situ deposition of the FM layer or the complex capping/decapping processes of the protection layer. We have employed an in situ fabrication of Bi2Se3/Fe heterostructures and investigated the SOT efficiency by spin torque ferromagnetic resonance. An enhanced SOT efficiency and large effective spin mixing conductance have been obtained especially below 100 K as compared with ex situ methods. The enhancement of the SOT efficiency is attributed to a much thinner interfacial layer (0.96 nm) in the in situ case and thus the enhanced interface spin transparency. Our results reveal the crucial role of interface engineering in exploring highly efficient TI-based spintronic devices.

physics, applied
Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2

Fan Yang,Subhamoy Ghatak,A. A. Taskin,Kouji Segawa,Yuichiro Ando,Masashi Shiraishi,Yasushi Kanai,Kazuhiko Matsumoto,Achim Rosch,Yoichi Ando

DOI: https://doi.org/10.48550/arXiv.1605.04149

2016-05-13

Mesoscale and Nanoscale Physics

Abstract:The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current direction, which has been a limiting factor for spin manipulations. Here we report that in devices based on the bulk-insulating topological insulator BiSbTeSe2, an unexpected switching of spin polarization was observed upon changing the chemical potential. The spin polarization expected from the topological surface states was detected in a heavily electron-doped device, whereas the opposite polarization was reproducibly observed in devices with low carrier densities. We propose that the latter type of spin polarization stems from topologically-trivial two-dimensional states with a large Rashba spin splitting, which are caused by a strong band bending at the surface of BiSbTeSe2 beneath the ferromagnetic electrode used as a spin detector. This finding paves the way for realizing the "spin transistor" operation in future topological spintronic devices.
Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi 2 Te 3 /TbFeCo Heterostructures

Zhihao Ji,Yuna Song,Yiwen Song,Ziyang Li,Jingying Zhang,Shitao Lou,Zongzhi Zhang,Qingyuan Jin

DOI: https://doi.org/10.1021/acsami.4c02263

IF: 9.5

2024-04-25

ACS Applied Materials & Interfaces

Abstract:Topological insulators (TIs) with spin-momentum-locked surface states and considerable spin-to-charge conversion (SCC) efficiency are ideal substitutes for the nonmagnetic layer in the traditional ferromagnetic/nonmagnetic (FM/NM) spintronic terahertz (THz) emitters. Here, the TI/ferrimagnetic structure as an effective polarization tunable THz source is verified by terahertz emission spectroscopy. The emitted THz electric field can be separated into two THz components utilizing their opposite...

materials science, multidisciplinary,nanoscience & nanotechnology
Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers

Qiming Shao,Guoqiang Yu,Lei Pan,Xiaoyu Che,Yabin Fan,Koichi Murata,Qinglin He,Tianxiao Nie,Xufeng Kou,Kang L. Wang

DOI: https://doi.org/10.1109/DRC.2018.8442225

2018-01-01

Abstract:Heavy metals and topological insulators are promising materials for converting charge current into spin current for efficient manipulation of magnetization states in magnetic devices [1]–[5]. One of the most important parameters is the charge-to-spin conversion (CS) efficiency. Improving CS efficiency is critical for reducing write current of the emerging nonvolatile memory technology, spin-orbit torque MRAM (SOT-MRAM) [2], which provides comparable speed with SRAM but with a much higher memory capacity. Here, we measure CS efficiency in various topological insulators (TIs) using second-harmonic method (2eo-method) and obtain a record-high value 8.33±0.65 for insulating (BiSb)2 Te3 at room temperature. We first establish the consistency of CS efficiency obtained between spin-torque ferromagnetic resonance (ST-FMR) and 2eo-method. Then, we systematically investigate the CS efficiency in a bilayer consisting of a metallic Bi2Se3 and a CoFeB thin film using 2eo-method. By tuning the Fermi level of TI layer into bulk band gap using (BiSb)2 Te3, we improve the CS efficiency by an order of magnitude.
Electric-field Control of Spin–orbit Torque in a Magnetically Doped Topological Insulator

Yabin Fan,Xufeng Kou,Pramey Upadhyaya,Qiming Shao,Lei Pan,Murong Lang,Xiaoyu Che,Jianshi Tang,Mohammad Montazeri,Koichi Murata,Li-Te Chang,Mustafa Akyol,Guoqiang Yu,Tianxiao Nie,Kin L. Wong,Jun Liu,Yong Wang,Yaroslav Tserkovnyak,Kang L. Wang

DOI: https://doi.org/10.1038/nnano.2015.294

2016-01-01

Abstract:Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.
Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi2Te3/TbFeCo Heterostructures

Zhihao Ji,Yuna Song,Yiwen Song,Ziyang Li,Jingying Zhang,Shitao Lou,Zongzhi Zhang,Qingyuan Jin

DOI: https://doi.org/10.1021/acsami.4c02263

IF: 9.5

2024-01-01

ACS Applied Materials & Interfaces

Abstract:Topological insulators (TIs) with spin-momentum-locked surface states and considerable spin-to-charge conversion (SCC) efficiency are ideal substitutes for the nonmagnetic layer in the traditional ferromagnetic/nonmagnetic (FM/NM) spintronic terahertz (THz) emitters. Here, the TI/ferrimagnetic structure as an effective polarization tunable THz source is verified by terahertz emission spectroscopy. The emitted THz electric field can be separated into two THz components utilizing their opposite symmetry on pump polarization and the magnetic field. TI not only emits a THz electric field via the linear photogalvanic effect (LPGE) but also serves as the medium of SCC via the inverse Edelstein effect (IEE) in the heterostructure. In addition, the amplitude and polarity of the SCC component can be efficiently manipulated by temperature in our ferrimagnetic TbFeCo layer compared with Co or Fe. Once these two THz components are delicately set orthogonally, an elliptical THz wave is generated by the intrinsic phase difference at the THz frequency range. The feasible control of its polarization and chirality is demonstrated by three means: pump polarization, magnetic field, and temperature. These appealing observations may pave the way for the development of elliptical THz wave emitters and polarization-sensitive THz spectroscopy.
Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure

Sayani Pal,Anuvab Nandi,Sambhu G. Nath,Pratap Kumar Pal,Kanav Sharma,Subhadip Manna,Anjan Barman,Chiranjib Mitra

DOI: https://doi.org/10.1063/5.0192717

IF: 4

2024-03-11

Applied Physics Letters

Abstract:In this study, we report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure (BiSbTe1.5Se1.5/Cu/Ni80Fe20) by using spin-pumping technique, where BiSbTe1.5Se1.5 is the TI and Ni80Fe20 is the ferromagnetic (FM) layer. The SCC, characterized by inverse Edelstein effect length (λIEE) in the TI material, gets altered with an intervening Copper (Cu) layer, and it depends on the interlayer thickness. The introduction of Cu layer at the interface of TI and FM metal provides a new degree of freedom for tuning the SCC efficiency of the topological surface states. The significant enhancement of the measured spin-pumping voltage and the increased linewidth of ferromagnetic resonance absorption spectra due to the insertion of Cu layer at the interface indicate a reduction in spin memory loss at the interface that resulted from the presence of exchange coupling between the surface states of TI and the local moments of FM metal. The temperature dependence (from 8 to 300 K) of the evaluated λIEE data for all the trilayer systems, TI/Cu/FM with different Cu thicknesses, confirms the effect of exchange coupling between the TI and FM layer on the SCC efficiency of the topological surface state. This study offers promising ways for designing more efficient spin-charge conversion devices of the TI-based heterostructure by controlling the interface effects.

physics, applied
Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 - x Sbx Topological Insulator

E Rongione,L Baringthon,D She,G Patriarche,R Lebrun,A Lemaître,M Morassi,N Reyren,M Mičica,J Mangeney,J Tignon,F Bertran,S Dhillon,P Le Févre,H Jaffrès,J-M George

DOI: https://doi.org/10.1002/advs.202301124

Abstract:The helicity of three-dimensional (3D) topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy are combined to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi1 - x Sbx ultrathin films, down to few nanometers where confinement effects emerge. This large conversion efficiency is correlated, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. Both surface state robustness and sizeable conversion efficiency in epitaxial Bi1 - x Sbx thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.
Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films

Federico Binda,Stefano Fedel,Santos Francisco Alvarado,Paul Noël,Pietro Gambardella

DOI: https://doi.org/10.1002/adma.202304905

2023-10-05

Abstract:Topological insulators have attracted great interest as generators of spin-orbit torques (SOTs) in spintronic devices. Bi\textsubscript{1-x}Sb\textsubscript{x} is a prominent topological insulator that has a high charge-to-spin conversion efficiency. However, the origin and magnitude of the SOTs induced by current-injection in Bi\textsubscript{1-x}Sb\textsubscript{x} remain controversial. Here we report the investigation of the SOTs and spin Hall magnetoresistance resulting from charge-to-spin conversion in twin-free epitaxial layers of Bi\textsubscript{0.9}Sb\textsubscript{0.1}(0001) coupled to FeCo, and compare it with that of amorphous Bi\textsubscript{0.9}Sb\textsubscript{0.1}. We find a large charge-to-spin conversion efficiency of 1 in the first case and less than 0.1 in the second, confirming crystalline Bi\textsubscript{0.9}Sb\textsubscript{0.1} as a strong spin injector material. The SOTs and spin Hall magnetoresistance are independent of the direction of the electric current, indicating that charge-to-spin conversion in single-crystal Bi\textsubscript{0.9}Sb\textsubscript{0.1}(0001) is isotropic despite the strong anisotropy of the topological surface states. Further, we find that the damping-like SOT has a non-monotonic temperature dependence with a minimum at 20~K. By correlating the SOT with resistivity and weak antilocalization measurements, we conclude that charge-spin conversion occurs via thermally-excited holes from the bulk states above 20~K, and conduction through the isotropic surface states with increasing spin polarization due to decreasing electron-electron scattering below 20~K.

Materials Science,Mesoscale and Nanoscale Physics
Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

E. Rongione,L. Baringthon,D. She,G. Patriarche,R. Lebrun,A. Lemaitre,M. Morassi,N. Reyren,M. Micica,J. Mangeney,J. Tignon,F. Bertran,S. Dhillon,P. Le Fevre,H. Jaffres,J.-M. George

2023-03-26

Abstract:The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.

Materials Science,Mesoscale and Nanoscale Physics
Tunable spin–charge conversion in class-I topological Dirac semimetals

Rui-Hao Li,Pengtao Shen,Steven S.-L. Zhang

DOI: https://doi.org/10.1063/5.0077431

IF: 6.6351

2022-04-01

APL Materials

Abstract:We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin–charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis ( z axis) is approximately conserved, which leads to an anisotropic spin Hall effect; the resulting spin Hall current relies on the relative orientation between the external electric field and the z axis. The application of a magnetic field, on the other hand, breaks time-reversal symmetry, driving the TDSM into a Weyl semimetal phase and, consequently, partially converting the spin current to a charge Hall current. Using the Kubo formulas, we numerically evaluate the spin and charge Hall conductivities based on a low-energy TDSM Hamiltonian together with the Zeeman coupling. Besides the conventional tensor element of the spin Hall conductivity [Formula: see text], we find that unconventional components, such as [Formula: see text] and [Formula: see text], also exist and vary as the magnetic field is rotated. Likewise, the charge Hall conductivity also exhibits appreciable tunability upon variation of the magnetic field. We show that such tunability—as well as large spin–charge conversion efficiency—arises from the interplay of symmetry and band topology of the TDSMs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

Luqiao Liu,A. Richardella,Ion Garate,Yu Zhu,N. Samarth,Ching-Tzu Chen

DOI: https://doi.org/10.1103/PhysRevB.91.235437

2015-10-20

Abstract:We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and bismuth antimony telluride, we verified the topological-surface-state origin of the observed giant spin signals. By injecting energetic electrons into bismuth selenide, we further studied the energy dependence of the effective spin polarization at the TI surface. The experimentally verified large spin polarization, as well as our calculations, provides new insights into optimizing TI materials for near room-temperature spintronic applications.

Mesoscale and Nanoscale Physics
Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Desheng Kong,Yulin Chen,Judy J. Cha,Qianfan Zhang,James G. Analytis,Keji Lai,Zhongkai Liu,Seung Sae Hong,Kristie J. Koski,Sung-Kwan Mo,Zahid Hussain,Ian R. Fisher,Zhi-Xun Shen,Yi Cui

DOI: https://doi.org/10.1038/nnano.2011.172

2012-01-01

Abstract:Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1,2,3,4,5,6,7,8,9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10,11,12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi2Te3, Sb2Te3 and Bi2Se3, has been explored extensively by means of material doping8,9,11 and electrical gating13,14,15,16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (BixSb1–x)2Te3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (BixSb1–x)2Te3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. The bulk conductivity of a topological insulator composed of Bi, Sb and Te can be reduced by orders of magnitude by tuning the ratio of Bi to Sb, allowing surface states to dominate conduction.
Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Pangihutan Gultom,Chia-Chieh Hsu,Min Kai Lee,Shu Hsuan Su,Jung-Chung-Andrew Huang

DOI: https://doi.org/10.3390/nano14020157

IF: 5.3

2024-01-11

Nanomaterials

Abstract:The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Theory of spin and orbital charge conversion at the surface states of Bi_{1-x}Sb_x topological insulator

Armando Pezo,Jean-Marie George,Henri Jaffrès

2024-09-17

Abstract:Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of large transient spin-charge conversion (SCC) and subsequent powerful THz emission from Co|Bi_{1-x}Sb_x bilayers clearly demonstrates such potentiality and feasibility for the near future. Amongst the exotic properties appearing in and at the surface of such quantum materials, spin-momentum locking (SML) and Rashba-Edelstein effects remain as key ingredients to effectively convert the spin degree of freedom into a charge or a voltage signal. In this work, we extend our analyses to the quantification of orbital momentum-locking and related orbital charge conversion effects in Bi_{0.85}Sb_{0.15} via orbital Rashba-Edelstein effects. In that sense, we will provide some clear theoretical and numerical insights implemented by multi-orbital and multi-layered tight-binding methods (TB) to clarify our recent experimental results obtained by THz-TDS spectroscopy.

Mesoscale and Nanoscale Physics

Octreotide LAR in carcinoid: how to dose?

Enhancement of spin-to-charge conversion efficiency in topological insulators by interface engineering

Spin-to-Charge Conversion Manipulated by Fine-Tuning the Fermi Level of Topological Insulator (Bi 1– x Sb x ) 2 Te 3

[Effect of a calcium antagonist, nifedipine, on the cold pressor test in normal subjects].

Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

Highly efficient charge-to-spin conversion from in situ Bi 2 Se 3 /Fe heterostructures

Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2

Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi 2 Te 3 /TbFeCo Heterostructures

Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers

Electric-field Control of Spin–orbit Torque in a Magnetically Doped Topological Insulator

Temperature-Dependent Spin-to-Charge Conversion and Efficient Manipulation of Elliptical THz Waves in Bi2Te3/TbFeCo Heterostructures

Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure

Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 - x Sbx Topological Insulator

Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

Tunable spin–charge conversion in class-I topological Dirac semimetals

Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Theory of spin and orbital charge conversion at the surface states of Bi_{1-x}Sb_x topological insulator