Abstract:Widespread applications of spintronic devices require an efficient method to manipulate the local magnetization. Topological insulators, such as Bi2Se3, are an emerging state of quantum matter, expected to exhibit more efficient charge-to-spin conversion and thus spin-obit torques (SOTs) compared to that of heavy metals. Here, we investigate the SOTs in the Bi2Se3/ferromagnet hetrostructures at different temperatures by the spin torque ferromagnetic resonance (ST-FMR) technique. We find that the SOTs efficiency abruptly increases from 0.047 at 300 K to 0.42 below 50 K. Moreover, we observe a significant out-of-plane SOT efficiency in the low temperature range. We identify that the spin-momentum-locked topological surface states (TSS) play an important role in the strong SOTs. By decreasing the Bi2Se3 thickness, we achieve TSS dominant SOT. The SOT efficiency is enhanced by more than 5 times below 8 quintuple layers and reaches a maximum value of ~1.75 at 5 quintuple layers at room temperature. In addition, the electron-mediated spin torque induced magnetization switching in the Bi2Se3/NiFe heterostructure is successfully achieved at room temperature. The switching current density, JC, is extremely low (~6 × 10^5 A/cm^2), which is much smaller than that in heavy metals. Our results illustrate that the thinner topological insulators possess a strong capability for generating SOTs. We also report the magnetization reorientation induced by magnon-mediated spin torque in topological insulator devices. Much less Joule heating is expected by taking advantage of magnons, which can carrier spin angular momentum without involving moving charges. Our observation is of importance for magnon-based future spin-devices.

Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2

Electrical Detection of Spin-Polarized Surface States Conduction in (bi(0.53)sb(0.47))2te3 Topological Insulator.

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Spin Polarization and Transport of Surface States in the Topological Insulators Bi2Se3 and Bi2Te3 from First Principles

Topological insulator spin transistor

Highly Tunable Charge-Spin Conversion in Topological Insulator Cr0.08-(Bi0.37Sb0.63)1.92Te3 via Ferroelectric Polarization

Direct Visualization of Current-Induced Spin Accumulation in Topological Insulators

Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$

Magnetization Switching Induced by Electron- and Magnon-Mediated Spin Torque in Topological Insulator Devices (conference Presentation)

Control of spin current and antiferromagnetic moments via topological surface state

Topological Surface States Originated Spin-Orbit Torques in Bi2Se3

Ultrafast Spin‐to‐Charge Conversion at the Surface of Topological Insulator Thin Films

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Room Temperature Magnetization Switching in Topological Insulator-Ferromagnet Heterostructures by Spin-Orbit Torques

Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films

Direct Observation of Spin-Polarized Surface States in the Parent Compound of a Topological Insulator Using Spin- and Angle-Resolved Photoemission Spectroscopy in a Mott-polarimetry Mode

Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

Topological Surface States‐Induced Perpendicular Magnetization Switching in Pt/Co/Bi2Se3 Heterostructures

Direct Observation of Spin-Polarized Surface States in the Parent Compound of Topological Insulator Bi-Sb Using Spin-Resolved-arpes in a 3D Mott-polarimetry Spin Mode