Abstract:Optical helicity provides us with an effective means to control the helicity-dependent photocurrent in the spin-momentum-locked surface states of topological insulators (TIs). Also, the TIs show potential in polarization detection as an intrinsic solid-state optical chirality detector for easier integration and fabrication. However, the complex photoresponses with the circular photogalvanic effect, the linear photogalvanic effect, and the photon drag effect in the TIs prevent them from direct chirality detection of the elliptically polarized light. Here, by fitting with the theoretical models to the measured photocurrents, the microscopic origin of different components of the helicity-dependent photocurrent has been demonstrated. We show a comprehensive study of the helicity-dependent photocurrent in (Bi1−xSb x )2Te3 thin films of different thicknesses as a function of the light incident angle and the gate-tuned chemical potential. The observation of the light incident angle dependence of the helicity-dependent photocurrent provides us with a polarization detection strategy using a TI thin film without the use of any additional optical elements, and the detection accuracy can be enhanced by gate tuning. Additionally, the Stokes parameters can be extracted by arithmetic operation of photocurrents measured with different incident angles and gating voltages for complete characterization of the polarization states of a light beam. Using this means, we realize the polarization detection and the Stokes parameters analysis with a single device. Our work provides an alternative solution to develop miniaturized intrinsic polarization-sensitive photodetectors.

Gate-Variable Mid-Infrared Optical Transitions in an Electronic Topological Insulator

Gate-Variable Mid-Infrared Optical Transitions in a (Bi_1-Xsb_x)_2te_3 Topological Insulator

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Gate Voltage Control of Helicity-Dependent Photocurrent and Polarization Detection in (Bi1-Xsbx)2te3 Topological Insulator Thin Films

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Liquid-Gated Ambipolar Transport in Ultrathin Films of a Topological Insulator Bi2Te3

Reversible engineering of topological insulator surface state conductivity through optical excitation

A gate-tunable quantum phase transition in a topological excitonic insulator

A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Topological Insulators for High-Performance Terahertz to Infrared Applications

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Gate-Tunable Transport in Quasi-One-Dimensional Α-Bi4i4 Field Effect Transistors

Magneto-optical Effects of an Artificially Layered Ferromagnetic Topological Insulator with a TC of 160 K

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Topological Control: Systematic Control of Topological Insulator Dirac Fermion Density on the Surface of Bi2Te3

Magneto-optical effects of an artificially-layered ferromagnetic topological insulator with T$_C$ of 160 K

Study of the Surface and Bulk States of Bi2Te3 Topological Insulators Using Terahertz Time-Domain Spectroscopy

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator.