Abstract:Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1,2,3,4,5,6,7,8,9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10,11,12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi2Te3, Sb2Te3 and Bi2Se3, has been explored extensively by means of material doping8,9,11 and electrical gating13,14,15,16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (BixSb1–x)2Te3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (BixSb1–x)2Te3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. The bulk conductivity of a topological insulator composed of Bi, Sb and Te can be reduced by orders of magnitude by tuning the ratio of Bi to Sb, allowing surface states to dominate conduction.

Liquid-Gated Ambipolar Transport in Ultrathin Films of a Topological Insulator Bi2Te3

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Gate-Tunable Transport in Quasi-One-Dimensional Α-Bi4i4 Field Effect Transistors

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Tuning the Quantum Oscillations of Surface Dirac Electrons in the Topological Insulator Bi$_2$Te$_2$Se by Liquid Gating

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Liquid-Gated Electric-Double-Layer Transistor On Layered Metal Dichalcogenide, Sns2

Ionic Liquid Gated Electric-Double-Layer Transistors Based on Mg-Doped Inn Epitaxial Films

Gate-Variable Mid-Infrared Optical Transitions in an Electronic Topological Insulator

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures

Gate-Variable Mid-Infrared Optical Transitions in a (Bi_1-Xsb_x)_2te_3 Topological Insulator

Electrically Sign-Reversible Topological Hall Effect in a Top-Gated Topological Insulator (Bi,Sb)2Te3 on a Ferrimagnetic Insulator Europium Iron Garnet

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films

Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors