Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Tuning the Quantum Oscillations of Surface Dirac Electrons in the Topological Insulator Bi$_2$Te$_2$Se by Liquid Gating

Gate Tuning of Electronic Phase Transitions in Two-DimensionalNbSe2

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Ionic Liquid Gating-Tuned Superconductor–insulator Transition in PrBa2Cu3O7/La2CuO4 Bilayers

Gate-Tunable Surface States In Topological Insulator Beta-Ag2te With High Mobility

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Gate-tuned quantum oscillations of topological surface states in beta-Ag2Te

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Liquid-Gated Ambipolar Transport in Ultrathin Films of a Topological Insulator Bi2Te3

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

Manipulating Surface States in Topological Insulator Nanoribbons

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Topological insulator quantum dot with tunable barriers

Topological Control: Systematic Control of Topological Insulator Dirac Fermion Density on the Surface of Bi2Te3

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Evidence for a Dirac Spectrum in the Topological Insulator Bi$_2$Te$_2$Se from High-Field Shubnikov-de Haas Oscillations

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning