Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Evidence for a Dirac Spectrum in the Topological Insulator Bi$_2$Te$_2$Se from High-Field Shubnikov-de Haas Oscillations

Shubnikov–de Haas Oscillations in N and P Type Bi 2 Se 3 Flakes

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Dual Evidence of Surface Dirac States in Thin Cylindrical Topological Insulator Bi2Te3 Nanowires

Probing the Coulomb Gap in the Topological Insulator BiSbTeSe2 Via Quantum Capacitance

Observation of Dirac Charge Density Waves in Bi$_2$Te$_2$Se

Evidence for massive bulk Dirac Fermions in Pb$_{1-x}$Sn$_x$Se from Nernst and thermopower experiments

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3

Imaging the Two-Component Nature of Dirac–Landau Levels in the Topological Surface State of Bi2Se3

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Zeeman Effect of the Topological Surface States Revealed by Quantum Oscillations Up to 91 Tesla

Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Evidence of Layered Transport of Bulk Carriers in Fe-doped Bi2Se3 Topological Insulators

Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator Bi$_2$Se$_3$

Shubnikov–de Haas Oscillations in Bulk ZrTe5 Single Crystals: Evidence for a Weak Topological Insulator

Evidence for Layered Quantized Transport in Dirac Semimetal ZrTe5.