Abstract:Bismuth selenide (Bi2Se3) is a prototypical 3D topological insulator whose Dirac surface states have been extensively studied theoretically and experimentally. Surprisingly little, however, is known about the energetics and dynamics of electrons and holes within the bulk band structure of the semiconductor. We use mid-infrared femtosecond transient reflectance measurements on a single nanoflake to study the ultrafast thermalization and recombination dynamics of photoexcited electrons and holes within the extended bulk band structure over a wide energy range (0.3 to 1.2 eV). Theoretical modeling of the reflectivity spectral line shapes at 10 K demonstrates that the electrons and holes are photoexcited within a dense and cold electron gas with a Fermi level positioned well above the bottom of the lowest conduction band. Direct optical transitions from the first and the second spin-orbit split valence bands to the Fermi level above the lowest conduction band minimum are identified. The photoexcited carriers thermalize rapidly to the lattice temperature within a couple of picoseconds due to optical phonon emission and scattering with the cold electron gas. The minority carrier holes recombine with the dense electron gas within 150 ps at 10 K and 50 ps at 300 K. Such knowledge of interaction of electrons and holes within the bulk band structure provides a foundation for understanding how such states interact dynamically with the topologically protected Dirac surface states.

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Direct observation of band bending in topological insulator Bi2Se3

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

A computational investigation of topological insulator Bi2Se3 film

Evidence of topological gap opening in the surface state of Bi$_2$Se$_3$ by proximity to a magnetic insulator

Pressure Induced Topological Phase Transition in Layered Bi2S3

Unoccupied Topological States on Bismuth Chalcogenides

Evidence for a Dirac Spectrum in the Topological Insulator Bi$_2$Te$_2$Se from High-Field Shubnikov-de Haas Oscillations

Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3

Direct Evidence For The Dirac-Cone Topological Surface States In The Ternary Chalcogenide Tlbise2

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi2Se3.

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator Bi$_2$Se$_3$

Optical evidence of blue shift in topological insulator bismuth selenide in the few-layer limit

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface