Abstract:Binary bismuth chalcogenides Bi$_2$Se$_3$, Bi$_2$Te$_3$, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures.

Direct Evidence For The Dirac-Cone Topological Surface States In The Ternary Chalcogenide Tlbise2

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

Observation of Topological Order in the TlBiSe2 Class : Probing The

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Unoccupied Topological States on Bismuth Chalcogenides

Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi2Se3.

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Experimental verification of PbBi$_{2}$Te$_{4}$ as a 3D topological insulator

Theoretical Prediction of Topological Insulators in Thallium-Based III-V-VI2 Ternary Chalcogenides

Experimental verification of the surface termination in the topological insulator TlBiSe$_{2}$ using core-level photoelectron spectroscopy and scanning tunneling microscopy

Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

Realization of Tunable Dirac Cone and Insulating Bulk States in Topological Insulators (Bi1−xsbx)2te3

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures