Evidence of Layered Transport of Bulk Carriers in Fe-doped Bi2Se3 Topological Insulators

Jun Ge,Taishi Chen,Ming Gao,Xuefeng Wang,Xingchen Pan,Meng Tang,Bo Zhao,Jun Du,Fengqi Song,Yongbing Xu,Rong Zhang

DOI: https://doi.org/10.1016/j.ssc.2015.03.012

IF: 1.934

2015-01-01

Solid State Communications

Abstract:We observe quantized Hall plateaus and Shubnikov de Haas oscillations in 10at% Fe-doped Bi2Se3 flakes. All the features of the quantum transport coincide while normalizing the field-angle variable magnetoresistance to the perpendicular direction. The Hall step gives a specific contribution of ~1 e2/h per quintuple layer. This reveals a two-dimensional (2D) transport of the bulk electrons in the topological insulators. The crystal is demonstrated with an obvious ferromagnetism. Further evidences including a Berry phase of zero, a weak localization and a large effective mass rule out the contribution of the topological surface states (SS), suggesting that a great care should be taken to pindown the transport of the topological SS in topological insulators.