Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi) 2 Te 3
Mao Ye,Wei Li,Siyuan Zhu,Yukiharu Takeda,Yuji Saitoh,Jiajia Wang,Hong Pan,Munisa Nurmamat,Kazuki Sumida,Fuhao Ji,Zhen Liu,Haifeng Yang,Zhengtai Liu,Dawei Shen,Akio Kimura,Shan Qiao,Xiaoming Xie
DOI: https://doi.org/10.1038/ncomms9913
IF: 16.6
2015-01-01
Nature Communications
Abstract:Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi) 2 Te 3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi) 2 Te 3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p -hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.