Abstract:The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

Carrier Dependent Ferromagnetism in Chromium Doped Topological Insulator Cr-Y(Bixsb1-X)(2-Y)Te-3

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi) 2 Te 3

Ferromagnetism of Magnetically Doped Topological Insulators in CrxBi2−xTe3 Thin Films

Carriers Dependence of the Magnetic Properties in Magnetic Topological Insulator Sb1.95−xBixCr0.05Te3

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Interplay Between Different Magnetisms in Cr-doped Topological Insulators.

Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films

Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films

Magnetically Doped Semiconducting Topological Insulators

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

Local Atomic and Electronic Structures in Ferromagnetic Topological Insulator Cr-Doped (Bixsb1-X)(2)te-3 Studied by Xafs and Ab Initio Calculations

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films

Charge Carrier Mediation and Ferromagnetism Induced in MnBi6Te10 Magnetic Topological Insulators by Antimony Doping

Identifying Magnetic Anisotropy of the Topological Surface State Ofcr0.05sb1.95te3with Spin-Polarized STM

Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$

Observation of Giant Topological Hall Effect in Room-Temperature Ferromagnet Cr 0.82 Te

Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi$_{2}$Te$_{3}$ and BiSbTe$_{3}$ containing self-organized MnBi$_{2}$Te$_{4}$ septuple layers