Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Gate-tuned quantum oscillations of topological surface states in beta-Ag2Te

Gate-Tunable Surface States In Topological Insulator Beta-Ag2te With High Mobility

Beta-Ag2Te: A topological insulator with strong anisotropy

Aharonov-Bohm Interference and Colossal Magnetoresistance in Anisotropic Topological Insulator Beta-Ag2Te

Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates.

Tuning the Quantum Oscillations of Surface Dirac Electrons in the Topological Insulator Bi$_2$Te$_2$Se by Liquid Gating

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag 2 Te Nanoplates

Zeeman Effect of the Topological Surface States Revealed by Quantum Oscillations Up to 91 Tesla

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Manipulating Surface States in Topological Insulator Nanoribbons

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Evidence for a Dirac Spectrum in the Topological Insulator Bi$_2$Te$_2$Se from High-Field Shubnikov-de Haas Oscillations

Gate-tuned Aharonov-Bohm Interference of Surface States in a Quasi-Ballistic Dirac Semimetal Nanowire

Spinor-dominated magnetoresistance driven by the topological phase transition in $β$-Ag$_2$Se

Spinor-dominated magnetoresistance in β -Ag 2 Se

Observation and Control of the Anomalous Aharonov-Bohm Oscillation in Enhanced-Mode Topological Insulator Nanowire Field-Effect Transistors