Gate-Tunable Surface States In Topological Insulator Beta-Ag2te With High Mobility

Pengliang Leng,Fangting Chen,Xiangyu Cao,Yuxiang Wang,Ce Huang,Xuandong Sun,Yaozhi Yang,Junchen Zhou,Xiaoyi Xie,Zihan Li,Enze Zhang,Linfeng Ai,Yunkun Yang,Faxian Xiu

DOI: https://doi.org/10.1021/acs.nanolett.0c01676

IF: 10.8

2020-01-01

Nano Letters

Abstract:Stimulated by novel properties in topological insulators, experimentally realizing quantum phases of matter and employing control over their properties have become a central goal in condensed matter physics. beta-silver telluride (Ag2Te) is predicted to be a new type narrow-gap topological insulator. While enormous efforts have been plunged into the topological nature in silver chalcogenides, sophisticated research on low-dimensional nanostructures remains unexplored. Here, we report the record-high bulk carrier mobility of 298 600 cm(2)/(V s) in high-quality Ag2Te nanoplates and the coexistence of the surface and bulk state from systematic Shubnikov-de Haas oscillations measurements. By tuning the correlation between the top and bottom surfaces, we can effectively enhance the contribution of the surface to the total conductance up to 87% at 130 V. These results are instrumental to the high-mobility physics study and even suitable to explore exotic topological phenomena in this material system.