Abstract:Helical Dirac fermions-charge carriers that behave as massless relativistic particles with an intrinsic angular momentum (spin) locked to its translational momentum-are proposed to be the key to realizing fundamentally new phenomena in condensed matter physics. Prominent examples include the anomalous quantization of magneto-electric coupling, half-fermion states that are their own antiparticle, and charge fractionalization in a Bose-Einstein condensate, all of which are not possible with conventional Dirac fermions of the graphene variety. Helical Dirac fermions have so far remained elusive owing to the lack of necessary spin-sensitive measurements and because such fermions are forbidden to exist in conventional materials harbouring relativistic electrons, such as graphene or bismuth. It has recently been proposed that helical Dirac fermions may exist at the edges of certain types of topologically ordered insulators-materials with a bulk insulating gap of spin-orbit origin and surface states protected against scattering by time-reversal symmetry-and that their peculiar properties may be accessed provided the insulator is tuned into the so-called topological transport regime. However, helical Dirac fermions have not been observed in existing topological insulators. Here we report the realization and characterization of a tunable topological insulator in a bismuth-based class of material by combining spin-imaging and momentum-resolved spectroscopies, bulk charge compensation, Hall transport measurements and surface quantum control. Our results reveal a spin-momentum locked Dirac cone carrying a non-trivial Berry's phase that is nearly 100 per cent spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers point and can be driven to the long-sought topological spin transport regime. The observed topological nodal state is shown to be protected even up to 300 K. Our demonstration of room-temperature topological order and non-trivial spin-texture in stoichiometric Bi(2)Se(3).M(x) (M(x) indicates surface doping or gating control) paves the way for future graphene-like studies of topological insulators, and applications of the observed spin-polarized edge channels in spintronic and computing technologies possibly at room temperature.

Topological insulator quantum dot with tunable barriers

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Tuning the Quantum Oscillations of Surface Dirac Electrons in the Topological Insulator Bi$_2$Te$_2$Se by Liquid Gating

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Solution to the Hole-Doping Problem and Tunable Quantum Hall Effect in Bi2Se3 Thin Films

A gate-tunable quantum phase transition in a topological excitonic insulator

A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Observation of Quantum-Tunnelling-Modulated Spin Texture in Ultrathin Topological Insulator Bi2se3 Films

Solution to the hole-doping problem and tunable quantum Hall effect in Bi$_{2}$Se$_{3}$ thin films

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Quantum transport in an ambipolar InSb nanowire quantum dot device

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films

A Tunable Topological Insulator in the Spin Helical Dirac Transport Regime.

Synthesis and Quantum Transport Properties of Bi2se3 Topological Insulator Nanostructures