Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Topological Insulator Nanostructures: Materials Synthesis, Raman Spectroscopy, and Transport Properties

Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrostatic Properties

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

Controlled Synthesis of Topological Insulator Nanoplate Arrays on Mica.

Synthesis of the 2D Ternary Topological Insulator Bi2‐xSbxSe3 with a Low Carrier Concentration and Ultrahigh Carrier Mobility

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Electrical and Photoresponse Properties of Inversion Asymmetric Topological Insulator BiTeCl Nanoplates

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates.

Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.

Distinct Quantum States in Topological Insulator Surfaces of Nanowires and Nanoribbons of Bismuth Selenide (Bi2Se3)

Topological Insulator Nanostructures for Near-Infrared Transparent Flexible Electrodes.

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching