Abstract:Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI materials Bi2Se3, Bi2Te3 and Sb2Te3 are TI with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependant color and contrast for nanoplates grown on oxidized silicon (300nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface states effects in transport measurements. Low temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Topological Insulator Bi 2 Te 3 Films Synthesized by Metal Organic Chemical Vapor Deposition

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Challenges of Topological Insulator Research: Bi2Te3 Thin Films and Magnetic Heterostructures

Robust Topological Insulating Property in C2X-functionalized III-V Monolayers

Topological Insulator Thin Films Of Bi2te3 With Controlled Electronic Structure

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)

Epitaxial Growth of Ternary Topological Insulator Bi 2 Te 2 Se 2D Crystals on Mica.

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Thermoelectric Effects and Topological Insulators

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Atomically smooth ultrathin films of topological insulator Sb<sub>2</sub>Te<sub>3</sub>

High-Quality Bi2te3 Thin Films Grown On Mica Substrates For Potential Optoelectronic Applications

J ul 2 01 6 Thermoelectric Effects and Topological Insulators ∗

Molecular beam epitaxial growth of topological insulators.

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Study of the Surface and Bulk States of Bi2Te3 Topological Insulators Using Terahertz Time-Domain Spectroscopy

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential