Abstract:As extraordinary topological insulators, 2D bismuth telluride (Bi2Te3) nanosheets have been synthesized and controlled with a few-layer structure by a facile and fast solvothermal process. The detail-oriented growth evolution of 2D Bi2Te3 in an ethylene glycol reducing solution is discovered and recorded for direct observation of the liquid–solid interactions through the use of environmental SEM. At the initial synthesis stage, Te nanowires are rapidly synthesized and observed in solution. In the next stage, Bi nanoclusters slowly adhere to the Te nanowires and react to form hierarchical Te-Bi2Te3 nanostructured materials. Additionally, the Te nanowires shorten in-plane in an orderly manner, while the Bi2Te3 nanosheets exhibit directional out-of-plane epitaxial growth. In the last procedure, Bi2Te3 nanosheets with a clear hexagonal appearance can be largely obtained. Experiments performed under these rigorous conditions require careful consideration of the temperature, time, and alkaline environment for each reaction process. In addition, the yield of a wider and thinner Bi2Te3 nanosheet is synthesized by manipulating the crystal growth with an optimal alkaline concentration, which is found through statistical analysis of the AFM results. In the UV–Vis–NIR spectroscopy results, the main peak in the spectrum tends to redshift, while the other peak in the ultraviolet range decreases during Bi2Te3 nanosheet synthesis, facilitating a rapid understanding of the trends in the morphological evolution of the Bi2Te3 materials in solution. By rationalizing the above observations, we are the first to report the success of environmental SEM, HAADF-STEM, and UV–Vis–NIR spectroscopy for confirming the Bi2Te3 nanosheet formation mechanism and the physical properties in the solvent media. This research promotes the future optimization of promising Bi2Te3 nanomaterials that can be used in the fabrication of thermoelectric and topological components.

Epitaxial Growth of Ternary Topological Insulator Bi 2 Te 2 Se 2D Crystals on Mica.

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Epitaxial Growth of Large-Grain-size Ferromagnetic Monolayer CrI3 for Valley Zeeman Splitting Enhancement

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Molecular beam epitaxial growth of topological insulators.

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Controlled Synthesis of Topological Insulator Nanoplate Arrays on Mica.

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

A ferromagnetic insulating substrate for the epitaxial growth of topological insulators

Unraveling the nature of quasi van der Waals Epitaxy of magnetic topological insulators Cr: (BixSb1-x)2Te3 on a GaAs (111) substrate through coherently strained interface

Synthesis of the 2D Ternary Topological Insulator Bi2‐xSbxSe3 with a Low Carrier Concentration and Ultrahigh Carrier Mobility

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

High-Quality Bi2te3 Thin Films Grown On Mica Substrates For Potential Optoelectronic Applications

Conformal Growth of Cr 2 Te 3 on Bi 2 Te 3 Nanodots with a Topological Hall Effect

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Direct Observation of the Epitaxial Growth of Bismuth Telluride Topological Insulators from One-Dimensional Heterostructured Nanowires

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy