Abstract:The intrinsic antiferromagnetic topological insulator MnBi2Te4and members of its family have been the subject of theoretical and experimental research, which has revealed the presence of a variety of defects and disorders that are crucial in determining the topological and magnetic properties. This also brings about challenges in realizing the quantum states like the quantum anomalous Hall and the axion insulator states. Here, utilizing cryogenic magnetoelectric transport and magnetic measurements, we systematically investigate the effects arising from intrinsic doping by antisite defects and extrinsic doping by Sb in MnBi2Te4epitaxial films grown by molecular beam epitaxy. We demonstrate that the nonequilibrium condition in epitaxy allows a wide growth window for optimizing the crystalline quality and defect engineering. While the intrinsic antisite defects caused by the intermixing between Bi and Mn can be utilized to tune the Fermi level position as evidenced by a p-to-n conductivity transition, the extrinsic Sb-doping not only compensates for this doping effect but also modifies the magnetism and topology of the film, during which a topological phase transition is developed. Conflicting reports from the theoretical calculations and experimental measurements in bulk crystals versus epitaxial films are addressed, which highlights the intimate correlation between the magnetism and topology as well as the balance between the Fermi-level positioning and defect control. The present study provides an experimental support for the epitaxial growth of the intrinsic topological insulator and underlines that the topology, magnetism, and defect engineering should be revisited for enabling a steady and reliable film production.

Topological Insulator Thin Films Of Bi2te3 With Controlled Electronic Structure

Molecular beam epitaxial growth of topological insulators.

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Topological Insulator Sb2Te3 Thin Films Grown by MBE

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

Investigating and Manipulating the Molecular Beam Epitaxy Growth Kinetics of Intrinsic Magnetic Topological Insulator MnBi2Te4 with in Situ Angle-Resolved Photoemission Spectroscopy

Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4within situangle-resolved photoemission spectroscopy.

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Doping Nature of Cu in Epitaxial Topological Insulator Bi2te3 Thin Films

High-Quality Bi2te3 Thin Films Grown On Mica Substrates For Potential Optoelectronic Applications

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3